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參數(shù)資料
| 型號： | MMBT123S-13 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 18 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 69K |
| 代理商： | MMBT123S-13 |
DS30292 Rev. 5 - 2
2 of 3
MMBT123S
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V(BR)CBO
45
V
IC = 100
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
18
V
IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
5
V
IE = 100
mA, IC = 0
Collector Cutoff Current
ICBO
1
mA
VCB = 40V, IE = 0
Emitter Cutoff Current
IEBO
1
mA
VEB = 4V, IC = 0
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
150
800
IC = 100mA, VCE = 1V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.5
V
IC = 300mA, IB = 30mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
8pF
VCB = 10V, f = 1.0MHz, IE = 0
Current Gain-Bandwidth Product
fT
100
MHz
VCB = 10V, IE = 50mA,
f = 100MHz
T
C
U
D
O
R
P
W
E
N
Notes:
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant Version part number, please add "-F" suffix to the part number above. Example: MMBT123S-7-F.
Device
Packaging
Shipping
MMBT123S-7
SOT-23
3000/Tape & Reel
Ordering Information (Note 4)
K6D = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K6D
YM
Marking Information
Date Code Key
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
Year
2002
2003
2004
2005
2006
2007
2008
2009
Code
NP
R
S
TU
V
W
Notes:
3. Short duration pulse test used to minimize self-heating effect.
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