參數(shù)資料
型號(hào)： MMBT1015G-Y-AN3-R
廠商： UNISONIC TECHNOLOGIES CO LTD
元件分類： 小信號(hào)晶體管
英文描述： 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： HALOGEN FREE PACKAGE-3
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 172K
代理商： MMBT1015G-Y-AN3-R
MMBT1015
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-015,F
ABSOLUTE MAXIMUM RATING ( Ta=25°C , unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
SOT-23
250
mW
Collector Dissipation
SOT-523/SOT-113/SOT-323
PC
200
mW
Collector Current
IC
-150
mA
Base Current
IB
-50
mA
Junction Temperature
TJ
125
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
Ic = -100
μA, I
E = 0
-50
V
Collector-Emitter Breakdown Voltage
BVCEO
Ic = -10mA, IB = 0
-50
V
Emitter-Base Breakdown Voltage
BVEBO
IE = -10μA, Ic = 0
-5
V
Collector-Emitter Saturation Voltage
VCE(SAT) Ic = -100mA, IB = -10mA
-0.1
-0.3
V
Base-Emitter Saturation Voltage
VBE(SAT) Ic = -100mA, IB = -10mA
-1.1
V
Collector Cut-off Current
ICBO
VCB = -50V, IE = 0
-100
nA
Emitter Cut-off Current
IEBO
VEB = -5V, Ic = 0
-100
nA
hFE1
VCE = -6V, Ic = -2mA
120
700
DC Current Gain
hFE2
VCE = -6V, Ic = -150mA
25
Transition Frequency
fT
VCE = -10V, Ic = -1mA
80
MHz
Output Capacitance
COB
VCB = -10V, IE = 0, f = 1MHz
4.0
7.0
pF
Noise Figure
NF
Ic = -0.1mA, VCE = -6V
RG= 1kΩ, f = 100Hz
0.5
6
dB
CLASSIFICATION OF hFE1
RANK
Y
GR
BL
RANGE
120-240
200-400
350-700
相關(guān)PDF資料
PDF描述
MMBT1015G-BL-AE3-R 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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