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參數(shù)資料
| 型號(hào)： | MMBT1015 |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 201K |
| 代理商： | MMBT1015 |
MCC
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Noise Figure
NF
Ic=-0.1mA,VCE=-6V
RG=1k
,f=100Hz
0.5
6
dB
RANGE
130-200
200-400
CLASSIFICATION OF hFE1
ELECTRICAL CHARACTERISTICS Ta=25°C Unless Otherwise Specified
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
Collector-Emitter voltage ( V)
Ic
,C
o
lle
ctor
cu
rr
ent
(m
A)
-0
-4
-8
-12
-16
-20
0
-10
-20
-30
-40
-50
IB=-50
A
IB=-100
A
IB=-150
A
IB=-200
A
IB=-250
A
IB=-300
A
Fig.2 DC current Gain
Ic,Collector current (mA)
H
FE
,D
C
c
u
rr
ent
Gai
n
10
2
10
1
10
0
10
3
-10
3
-10
2
-10
1
-10
0
-10
-1
VCE=-6V
Fig.3 Base-Emitter on Voltage
Ic
,C
ol
le
ctor
c
u
rr
ent
(
m
A)
Base-Emitter voltage (V)
0
-0.2
-0.4
-0.6
-0.8
-1.0
VCE=-6V
Ic,Collector current (mA)
Satur
a
tion
v
o
ltage
(
V
)
-10
1
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
VCE(sat)
VBE(sat)
Ic=10*IB
Ic,Collector current (mA)
10
3
C
u
rr
ent
G
a
in
-bandw
id
th
pr
oduc
t,f
T(M
H
z)
10
0
10
1
10
2
VCE=-6V
Collector-Base voltage (V)
C
ob,C
apac
itanc
e
(
pF
)
10
0
10
1
10
2
f=1MHz
IE=0
-10
-1
-10
0
-10
1
-10
2
-10
3
-10
2
-10
1
-10
0
-10
-1
-10
0
-10
1
-10
2
-10
0
-10
1
-10
2
-10
3
-10
-1
-10
-2
-10
0
-10
-1
-10
-1
10
-1
RANK
L
H
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
BVCBO
Ic=-100
A,IE=0
-50
V
Collector-emitter breakdown voltage
BVCEO
Ic=-10mA,IB=0
-50
V
Emitter-base breakdown voltage
BVEBO
IE=-10
A,Ic=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-100
nA
Emitter cut-off current
IEBO
VEB=-5V,Ic=0
-100
nA
DC current gain(note)
hFE1
hFE2
VCE=-6V,Ic=-2mA
VCE=-6V,Ic=-150mA
70
25
400
Collector-emitter saturation voltage
VCE(sat)
Ic=-100mA,IB=-10mA
-0.1
-0.3
V
Base-emitter saturation voltage
VBE(sat)
Ic=-100mA,IB=-10mA
-1.1
V
Current gain bandwidth product
fT
VCE=-10V,Ic=-1mA
80
MHz
Output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
4.0
7.0
pF
www.mccsemi.com
Revision: 2
2003/04/30
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