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參數(shù)資料
| 型號(hào)： | MMBT100S62Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 38K |
| 代理商： | MMBT100S62Z |
PN100
/
MMBT100
/
PN100A
/
MMBT100A
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
45
V
VCBO
Collector-Base Voltage
75
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current - Continuous
500
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
MMBT100
MMBT100A
PN100
PN100A
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 10.
Absolute Maximum Ratings*
TA=25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Discrete POWER & Signal
Technologies
Thermal Characteristics
TA= 25°C unless otherwise noted
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Symbol
Characteristic
Max
Units
PN100A
*MMBT100A
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
°C/W
C
B
E
TO-92
C
B
E
SOT-23
Mark: NA / NA1
1997 Fairchild Semiconductor Corporation
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