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參數(shù)資料
| 型號(hào)： | MMBT100AS62Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 3/3頁(yè) |
| 文件大小： | 38K |
| 代理商： | MMBT100AS62Z |
PN100
/
MMBT100
/
PN100A
/
MMBT100A
Typical Characteristics (continued)
NPN General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
300
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
CO
LLE
CTOR
-E
M
ITT
ER
V
O
L
T
A
G
E
(
V
)
β = 10
C
B
ESA
T
25 °C
- 40 °C
125 °C
Base-Emitter ON Voltage vs
Collector Current
1
10
100
500
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
BA
SE
-E
MITTER
ON
VO
L
T
A
GE
(V
)
C
BE
O
N
V
= 5V
CE
25 °C
- 40 °C
125 °C
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
T - AMBIENT TEMPERATURE ( C)
I
-
CO
LLE
CT
O
R
CURR
EN
T
(n
A
)
A
CBO
V
= 60V
CB
Input and Output Capacitance
vs Reverse Voltage
0.1
1
10
100
0.1
1
10
100
V
- COLLECTOR VOLTAGE(V)
CA
P
A
CIT
A
NCE
(
pF)
Cib
Cob
f = 1.0 MHz
ce
Switching Times vs
Collector Current
10
20
30
50
100
200
300
0
30
60
90
120
150
180
210
240
270
300
I - COLLECTOR CURRENT (mA)
T
IME
(n
S
)
IB1 = IB2 = Ic / 10
V
= 10 V
C
cc
t s
t d
t f
t r
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
TEMPERATURE ( C)
P
-
P
O
W
E
R
D
ISSI
P
A
T
IO
N
(
m
W
)
D
o
TO-92
SOT-23
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| MMBT100AL99Z | 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT1010 | 制造商:ETL 制造商全稱:E-Tech Electronics LTD 功能描述:Low Saturation Voltage |
| MMBT1010LT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Low Saturation Voltage |
| MMBT1010T1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT |
| MMBT1015 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW FREQUENCY PNP AMPLIFIER TRANSISTOR |
| MMBT1015_11 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW FREQUENCY PNP AMPLIFIER TRANSISTOR |
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