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參數(shù)資料
| 型號： | MMBT100AL99Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 38K |
| 代理商： | MMBT100AL99Z |
PN100
/
MMBT100
/
PN100A
/
MMBT100A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA= 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
BVCBO
Collector-Base Breakdown Voltage
IC = 10
A, I
B = 0
75
V
BVCEO
Collector-Emitter Breakdown Voltage*
IC = 1 mA, IE = 0
45
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
6.0
V
ICBO
Collector Cutoff Current
VCB = 60 V
50
nA
ICES
Collector Cutoff Current
VCE = 40 V
50
nA
IEBO
Emitter Cutoff Current
VEB = 4 V
50
nA
hFE
DC Current Gain
IC = 100
A, V
CE = 1.0 V
100
100A
IC = 10 mA, VCE = 1.0 V
100
100A
IC = 100 mA, VCE = 1.0 V*
IC = 150 mA, VCE = 5.0 V*
100
100A
80
240
100
300
100
450
600
350
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 200 mA, IB = 20 mA*
0.2
0.4
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 200 mA, IB = 20 mA*
0.85
1.0
V
fT
Current Gain - Bandwidth Product
VCE = 20 V, IC = 20 mA
250
MHz
Cobo
Output Capacitance
VCB = 5.0 V, f = 1.0 MHz
4.5
pF
NF
Noise Figure
IC = 100
A, V
CE = 5.0 V,
100
RG = 2.0 k
, f = 1.0 kHz
100A
5.0
4.0
dB
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
10
20
30
50
100
200 300
500
0
100
200
300
400
I - COLLECTOR CURRENT (mA)
h
-
TYP
ICA
L
PULSED
CURR
ENT
GA
IN
C
FE
125 °C
25 °C
- 40 °C
Vce = 5V
Collector-Emitter Saturation
Voltage vs Collector Current
1
10
100
400
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V
-
COLLE
CT
O
R
-E
M
IT
TER
VOL
T
A
GE
(V)
C
ESA
T
25 °C
- 40 °C
125 °C
β = 10
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