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參數(shù)資料
| 型號： | MMBR911LT1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 145K |
| 代理商： | MMBR911LT1 |
MMBR911LT1
MMBR911LT1G
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
THERMAL CHARACTERISTICS
Symbol
Rating
Value
Unit
RθJC
Thermal Resistance, Junction to Case
225
°C/W
ELECTRICAL SPECIFICATIONS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Symbol
Characteristics
Value
Unit
Min.
Typ.
Max.
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1.0 mA, IB=0)
12
-
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=0.1 mA, IE=0)
20
-
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=0.1 mA, IC=0)
2.0
-
Vdc
ICBO
Collector Cutoff Current
(VCB= 15 Vdc, IE=0)
-
50
nAdc
ON CHARACTERISTICS
Symbol
Characteristics
Value
Unit
Min.
Typ.
Max.
HFE
DC Current Gain
(IC=30 mAdc, VCE=10 Vdc)
30
-
200
-
DYNAMIC CHARACTERISTICS
Symbol
Characteristics
Value
Unit
Min.
Typ.
Max.
Ccb
Collector-Base Capacitance
(VCB=10 Vdc, IE=0, f=1.0 MHz)
-
1.0
pF
fT
Current Gain-Bandwidth Product
(VCE=10 Vdc, IC=30 mAdc, f=1.0 GHz)
-
6.0
-
GHz
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBR911LT1G | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR |
| MMBR920 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
| MMBR920L | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
| MMBR920LT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
| MMBR920LT3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
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