參數(shù)資料
型號： MMBFJ109
廠商： Fairchild Semiconductor Corporation
英文描述： N-Channel Switch
中文描述： N溝道開關(guān)
文件頁數(shù)： 1/7頁
文件大?。?/td> 169K
代理商： MMBFJ109
2002 Fairchild Semiconductor Corporation
Rev. B, July 2002
J
Absolute Maximum Ratings *
T
A
=25
°
C
unless otherwise noted
Symbol
V
DG
Drain-Gate Voltage
V
GS
Gate-Source Voltage
I
GF
Forward Gate Current
T
J
, T
stg
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
V
(BR)GSS
Gate-Source Breakdwon Voltage
I
GSS
Gate Reverse Current
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Parameter
Value
25
-25
10
-55 ~ +150
Units
V
V
mA
°
C
Test Condition
Min.
Typ.
Max.
Units
I
G
= -10
μ
A, V
DS
= 0
V
GS
= -15V, V
DS
= 0
V
GS
= -15V, V
DS
= 0, T
A
= 100
°
C
V
DS
= 15V, I
D
= 10nA 108
-25
V
nA
nA
V
V
V
-3.0
-200
-10
-6.0
-4.0
V
GS
(off)
Gate-Source Cutoff Voltage
109
110
-3.0
-2.0
-0.5
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current *
V
DS
= 15V, I
GS
= 0 108
109
110
80
40
10
mA
mA
mA
r
DS
(on)
Drain-Source On Resistance
V
DS
≤
0.1V, V
GS
= 0 108
109
110
8.0
12
18
Small Signal Characteristics
C
dg
(on)
C
sg
(off)
Capacitance
C
dg
(on)
Drain-Gate Off Capacitance
C
sg
(off)
Source-Gate Off Capacitance
Drain Gate & Source Gate On
V
DS
= 0, V
GS
= 0, f = 1.0MHz
85
pF
V
DS
= 0, V
GS
= -10, f = 1.0MHz
V
DS
= 0, V
GS
= -10, f = 1.0MHz
15
15
pF
pF
J108/J109/J110/MMBFJ108
N-Channel Switch
This device is designed for digital switching
applications where very low on resistance is
mandatory.
Sourced from Process 58.
1. Drain 2. Source 3. Gate
1
2
3
TO-92
1
1. Drain 2. Source 3. Gate
SuperSOT-3
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