參數(shù)資料
型號(hào): MMBF4392LT1G
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: JFET Switching Transistors N-Channel
中文描述: 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
封裝: HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 90K
代理商: MMBF4392LT1G
MMBF4391LT1, MMBF4392LT1, MMBF4393LT1
http://onsemi.com
4
Figure 5. Switching Time Test Circuit
Figure 6. Typical Forward Transfer Admittance
Figure 7. Typical Capacitance
I
D
, DRAIN CURRENT (mA)
2.0
5.0
3.0
7.0
0.5
1.0
3.0
7.0
5.0
50
30
10
20
0.7
2.0
10
20
,
f
V
10
2.0
1.5
15
3.0
5.0
7.0
0.5
1.0
3.0
30
5.0
0.3
0.1
10
0.05
0.03
V
R
, REVERSE VOLTAGE (VOLTS)
C
T
channel
= 25
°
C
V
DS
= 15 V
T
channel
= 25
°
C
(C
ds
is negligible
C
gs
V
DD
V
GG
R
GG
R
T
R
GEN
50
V
GEN
R
K
R
D
OUTPUT
INPUT
50
50
SET V
DS(off)
= 10 V
INPUT PULSE
t
r
0.25 ns
t
f
0.5 ns
PULSE WIDTH = 2.0 s
DUTY CYCLE
2.0%
R
GG
> R
K
R
D’
= R
D
(R
T
+ 50)
R
D
+ R
T
+ 50
Figure 8. Effect of GateSource Voltage
on DrainSource Resistance
80
120
160
200
50
1.0
3.0
170
5.0
20
10
40
2.0
80
140
70
V
GS
, GATESOURCE VOLTAGE (VOLTS)
r
4.0
0
40
100 mA
125 mA
75 mA
50 mA
25 mA
I
DSS
= 10
mA
T
channel
= 25
°
C
Figure 9. Effect of Temperature on DrainSource
OnState Resistance
1.8
1.0
2.0
1.2
1.4
1.6
0.8
0.6
0.4
I
D
= 1.0 mA
V
GS
= 0
,
D
R
T
channel
, CHANNEL TEMPERATURE (
°
C)
1.0
C
gd
110
6.0
7.0
8.0
0
r
,
D
R
MMBF4393
MMBF4392
MMBF4391
NOTE 1
The switching characteristics shown above were measured using
a test circuit similar to Figure 5. At the beginning of the switching
interval, the gate voltage is at Gate Supply Voltage (V
GG
). The
DrainSource Voltage (V
DS
) is slightly lower than Drain Supply
Voltage (V
DD
) due to the voltage divider. Thus Reverse Transfer
Capacitance (C
rss
) of GateDrain Capacitance (C
gd
) is charged to
V
GG
+ V
DS
.
During the turnon interval, GateSource Capacitance (C
gs
)
discharges through the series combination of R
Gen
and R
K
. C
gd
must
discharge to V
DS(on)
through R
G
and R
K
in series with the parallel
combination of effective load impedance (R’
D
) and DrainSource
Resistance (r
DS
). During the turnoff, this charge flow is reversed.
Predicting turnon time is somewhat difficult as the channel
resistance r
DS
is a function of the gatesource voltage. While C
gs
discharges, V
GS
approaches zero and r
DS
decreases. Since C
gd
discharges through r
DS
, turnon time is nonlinear. During turnoff,
the situation is reversed with r
DS
increasing as C
gd
charges.
The above switching curves show two impedance conditions; 1)
R
K
is equal to R
D’
which simulates the switching behavior of
cascaded stages where the driving source impedance is normally the
load impedance of the previous stage, and 2) R
K
= 0 (low
impedance) the driving source impedance is that of the generator.
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參數(shù)描述
MMBF4392LT1G 制造商:ON Semiconductor 功能描述:JFET
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MMBF4393_Q 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時(shí)的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
MMBF4393_S00Z 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時(shí)的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
MMBF4393LT1 功能描述:JFET 30V 10mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時(shí)的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel