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參數(shù)資料
| 型號： | MMBF2201NT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Power MOSFET 300 mAmps, 20 Volts N Channel SC70/SOT323(300mA,20V,SC70/SOT323,N溝道功率MOSFET) |
| 中文描述： | 300 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 57K |
| 代理商： | MMBF2201NT1 |
MMBF2201NT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 10 A)
V
(BR)DSS
20
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 16 Vdc, V
GS
= 0 Vdc)
(V
DS
= 16 Vdc, V
GS
= 0 Vdc, T
J
= 125
°
C)
I
DSS
1.0
10
Adc
GateBody Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 Adc)
V
GS(th)
1.0
1.7
2.4
Vdc
Static DraintoSource OnResistance
(V
GS
= 10 Vdc, I
D
= 300 mAdc)
(V
GS
= 4.5 Vdc, I
D
= 100 mAdc)
r
DS(on)
0.75
1.0
1.0
1.4
Forward Transconductance (V
DS
= 10 Vdc, I
D
= 200 mAdc)
g
FS
450
mMhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 5.0 V)
(V
DS
= 5.0 V)
C
iss
C
oss
45
pF
Output Capacitance
25
Transfer Capacitance
(V
DG
= 5.0 V)
C
rss
5.0
SWITCHING CHARACTERISTICS
(Note 3)
TurnOn Delay Time
(V
DD
= 15
Vdc, I
D
= 300 mAdc,
R
L
= 50 )
t
d(on)
2.5
ns
Rise Time
t
r
2.5
TurnOff Delay Time
t
d(off)
15
Fall Time
t
f
0.8
Gate Charge (See Figure 5)
Q
T
1400
pC
SOURCEDRAIN DIODE CHARACTERISTICS
Continuous Current
I
S
0.3
A
Pulsed Current
I
SM
0.75
Forward Voltage (Note 3)
V
SD
0.85
V
2. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperature.
TYPICAL CHARACTERISTICS
Figure 1. Typical Drain Characteristics
V
DS
, DRAINSOURCE VOLTAGE (VOLTS)
Figure 2. On Resistance versus Temperature
TEMPERATURE (
°
C)
I
R
0.5
0.6
0.7
0.8
0.9
1.0
0
4
0
8
7
9
10
0.6
0.8
1.0
1.2
1.4
1.6
0
60
1
2
3
5
6
0.1
0.2
0.3
0.4
0.4
0.2
40
20
0
20
40
60
80
100
120
140
160
V
GS
= 4 V
V
GS
= 3.5 V
V
GS
= 2.5 V
V
GS
= 3 V
V
GS
= 4.5 V
V
GS
= 10 V
I
D
= 100 mA
I
D
= 300 mA
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBF2201NT1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323 |
| MMBF2201NT1G | 功能描述:MOSFET 20V 300mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMBF2201PT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS |
| MMBF2202PT1 | 功能描述:MOSFET 20V 300mA P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMBF2202PT1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323 |
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