型號: | MMBF170 |
廠商: | NATIONAL SEMICONDUCTOR CORP |
元件分類: | 小信號晶體管 |
英文描述: | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
文件頁數(shù): | 2/5頁 |
文件大?。?/td> | 157K |
代理商: | MMBF170 |
相關PDF資料 |
PDF描述 |
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MMBF170/D87Z | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
MMBF170/L99Z | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
MMBF170LT3 | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
MMBF170L | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
MMBF170L | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
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MMBF170 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
MMBF170_08 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
MMBF170_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
MMBF170_D87Z | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
MMBF170_G | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |