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參數(shù)資料
| 型號： | MMBF1374T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 33K |
| 代理商： | MMBF1374T1 |
MMBF1374T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS
30
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
IDSS
–
1.0
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
–
1.0
Adc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
VGS(th)
–
2
2.8
Vdc
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 10 mAdc)
rDS(on)
–
27
50
Forward Transconductance (VDS = 10 Vdc, ID = 50 mAdc)
gFS
–
450
–
mMhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
Ciss
–
45
–
pF
Output Capacitance
(VDS = 5.0 V)
Coss
–
25
–
Transfer Capacitance
(VDG = 5.0 V)
Crss
–
5.0
–
SWITCHING CHARACTERISTICS (Note 3.)
Turn–On Delay Time
td(on)
–
2.5
–
ns
Rise Time
(VDD = 15 Vdc, ID = 50 mAdc,
tr
–
2.5
–
Turn–Off Delay Time
(VDD 15 Vdc, ID 50 mAdc,
RL = 50 )
td(off)
–
15
–
Fall Time
tf
–
0.8
–
2. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
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PDF描述 |
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| MMBF170-L99Z | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBF170 | 功能描述:MOSFET N-Ch Enhance RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| MMBF170_D87Z | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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