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參數(shù)資料
| 型號： | MMBF0202PLT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 300 mAmps, 20 Volts |
| 中文描述： | 300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 190K |
| 代理商： | MMBF0202PLT1 |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10
μ
A)
V(BR)DSS
20
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
1.0
10
μ
Adc
IGSS
—
—
±
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
VGS(th)
1.0
1.7
2.4
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 200 mAdc)
(VGS = 4.5 Vdc, ID = 50 mAdc)
rDS(on)
—
—
0.9
2.0
1.4
3.5
Ohms
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
gFS
—
600
—
mMhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
(VDS = 5.0 V)
(VDG = 5.0 V)
Ciss
Coss
Crss
—
50
—
pF
Output Capacitance
—
45
—
Transfer Capacitance
—
20
—
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
VGEN = –10 V, RG = 6.0
)
td(on)
tr
td(off)
tf
—
2.5
—
ns
Rise Time
(VDD = –15 Vdc,
RL = 75
, ID = 200 mAdc,
—
1.0
—
Turn–Off Delay Time
—
16
—
Fall Time
—
8.0
—
Gate Charge (See Figure 5)
(VDS = 16 V, VGS = 10 V,
ID = 200 mA)
QT
—
2700
—
pC
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
ISM
VSD
—
—
0.3
A
Pulsed Current
Forward Voltage(2)
—
—
0.75
—
1.5
—
V
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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