- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367625 > MMBD914-V-GS18 (VISHAY SEMICONDUCTORS) Diode Small Signal Switching 100V 0.2A 3-Pin SOT-23 T/R PDF資料下載
參數(shù)資料
| 型號： | MMBD914-V-GS18 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Diode Small Signal Switching 100V 0.2A 3-Pin SOT-23 T/R |
| 中文描述： | Diodes (General Purpose, Power, Switching) 100 Volt 200mA 4ns |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 66K |
| 代理商： | MMBD914-V-GS18 |
MMBD914
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 15-May-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85734
Small Signal Switching Diode
MECHANICAL DATA
Case:
SOT-23
Weight:
approx. 8.8 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
Silicon epitaxial planar diode
Fast switching diode in case SOT-23, especially
suited for automatic insertion.
AEC-Q101 qualified
Base P/N-E3 - RoHS-compliant, commercial
grade
Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
Material categorization: For definitions of compliance
please see
www.vishay.com/doc99912
1
2
3
PARTS TABLE
PART
ORDERING CODE
MMBD914-E3-08 or MMBD914-E3-18
MMBD914-HE3-08 or MMBD914-HE3-18
INTERNAL CONSTRUCTION
TYPE MARKING
REMARKS
MMBD914
Single diode
5D
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Peak reverse voltage
Maximum average forward rectified current
Maximum power dissipation
TEST CONDITION
SYMBOL
V
RM
I
F(AV)
P
tot
VALUE
100
200
225
UNIT
V
mA
mW
T
amb
= 25 °C
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Maximum junction temperature
Storage temperature range
Operating temperature range
TEST CONDITION
SYMBOL
T
j
T
stg
T
op
VALUE
150
- 55 to + 150
- 55 to + 150
UNIT
°C
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Forward voltage drop
I
F
= 10 mA
V
R
= 20 V
V
R
= 75 V
I
F
= 10 mA to i
= 1 mA,
V
R
= 6 V, R
L
= 100
Diode capacitance
V
R
= 0 V, f = 1 MHz
SYMBOL
V
F
I
R
I
R
MIN.
TYP.
MAX.
1
25
5
UNIT
V
nA
μA
Reverse current
Reverse recovery time
t
rr
4
ns
C
D
4
pF
相關PDF資料 |
PDF描述 |
|---|---|
| MMBZ12VDL | Double ESD protection diodes for transient overvoltage suppression |
| MMBZ18VCL | Double ESD protection diodes for transient overvoltage suppression |
| MMBZ20VCL | Double ESD protection diodes for transient overvoltage suppression |
| MMBZ33VCL | Double ESD protection diodes for transient overvoltage suppression |
| MPT612FBD48 | Maximum power point tracking IC |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBD914WS | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNTSWITCHING DIODES |
| MMBDT914LT1 | 制造商:ON Semiconductor 功能描述: |
| MMBF0201 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| MMBF0201N | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| MMBF0201NLT1 | 功能描述:MOSFET 20V 300mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。