參數(shù)資料
型號： MMBD770W
廠商： PanJit International Inc.
英文描述： SURFACE MOUNT SCHOTTKY DIODES
中文描述： 表面貼裝肖特基二極管
文件頁數(shù)： 1/3頁
文件大小： 157K
代理商： MMBD770W
PAGE . 1
STAD-JAN.22.2005
DATA SHEET
MMBD770W
SURFACE MOUNT SCHOTTKY
DIODES
VOLTAGE
70
V
olts
200mA
FEATURES
Extremely low minority carrier lifetime
Low capacitance ( 0.4pF @ 20V typical )
Low reverse leakage ( 30nA @ 35V typical )
.
Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20%% Pb
Pb free: 99% Sn above
MECHANICAL DATA
Case: SO
T
-323, Plastic
Terminals: Solderable per MIL-STD-202
G
, Method 208
Approx. Weight: 0.00
48
gram
Marking : 770
MAXIMUM RATINGS
Ratings at 25
O
C ambient temperature unless otherwise specified.
POWER
Reverse Breakdown Voltage
Surface mount package ideally suited for automatic insertion
.087(2.2)
.070(1.8)
.054(1.35)
.045(1.15)
.056(1.40)
.047(1.20)
.006(.15)
.002(.05)
.016(.40)
.078(.20)
.
.
.
.004(.10)MAX.
.
.
SOT-323
Unit: inch (mm)
PARAMETER
SYMBOL
VALUE
UNIT
Maximum Reverse Voltage
V
R
70
V
Peak Reverse Voltage
V
RRM
70
V
Continuous Forward Current
I
F
0.25
A
Power Dissipation
(1)
P
TOT
180
mW
Thermal Resistance , Junction to Ambient
(1)
R
Θ
J A
556
O
C/W
Junction Temperature
T
J
-50 to 125
O
C
Storage Temperature
T
STG
-50 to 150
O
C
Notes : 1. FR-5 Board = 1.0 × 0.75 × 0.062 in.
ELECTRICAL CHARACTERISTICS (T
A
=25
O
C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
V
(BR)
I
R
=10uA
70
-
-
V
Reverse Current
I
R
V
F
=35V
-
-
0.2
uA
Forward Voltage
V
F
I
F
=1mA
I
F
=10mA
-
-
-
-
0.5
1.0
V
Total Capacitance
C
T
V
R
=20V, f =1MHz
-
-
1.0
pF
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參數(shù)描述
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