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參數(shù)資料
| 型號(hào)： | MMBD717LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 20 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODES |
| 中文描述： | 20 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, CASE 419-04, SC-70, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 58K |
| 代理商： | MMBD717LT1G |
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 7
1
Publication Order Number:
MMBD717LT1/D
MMBD717LT1
Preferred Device
Common Anode
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
Extremely Fast Switching Speed
Extremely Low Forward Voltage 0.28 V (Typ) @ I
F
= 1 mAdc
PbFree Package is Available
MAXIMUM RATINGS
(T
J
= 125
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
20
V
Forward Power Dissipation
@ T
A
= 25
°
C
Derate above 25
°
C
P
F
200
1.6
mW
mW/
°
C
Operating Junction Temperature Range
T
J
55 to +150
°
C
Storage Temperature Range
T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ELECTRICAL CHARACTERISTICS
(T
A
= 125
°
C unless otherwise noted)
Rating
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I
R
= 10 A)
V
(BR)R
20
V
Total Capacitance
(V
R
= 1.0 V, f = 1.0 MHz)
C
T
2.0
2.5
P
F
Reverse Leakage (V
R
= 10 V)
(For each individual diode while
the second diode is unbiased)
I
R
0.05
1.0
Adc
Forward Voltage (I
F
= 1.0 mAdc)
V
F
0.28
0.37
Vdc
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
SC70 / SOT323
CASE 419
STYLE 4
MARKING DIAGRAM
ANODE
3
CATHODE
1
2
CATHODE
20 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
B3 M
B3 = Device Code
M
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
Device
Package
Shipping
ORDERING INFORMATION
MMBD717LT1
SC70
3,000 / Tape & Reel
MMBD717LT1G
SC70
(PbFree)
3,000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBD717S | 制造商:PANJIT 制造商全稱(chēng):Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY DIODES |
| MMBD717S-T1 | 制造商:WTE 制造商全稱(chēng):Won-Top Electronics 功能描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| MMBD717SW | 制造商:PANJIT 制造商全稱(chēng):Pan Jit International Inc. 功能描述:COMMON ANODE SCHOTTKY BARRIER DIODES |
| MMBD717SW-T1 | 制造商:WTE 制造商全稱(chēng):Won-Top Electronics 功能描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| MMBD717-T1 | 制造商:WTE 制造商全稱(chēng):Won-Top Electronics 功能描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE |
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