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參數(shù)資料
| 型號： | MMBD7000LT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Dual Switching Diode |
| 中文描述： | 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 80K |
| 代理商： | MMBD7000LT1 |
MMBD7000
350mW 100Volt
Dual Switching Diode
SOT-23
Suggested Solder
Pad Layout
Features
Low Current Leakage
Low Cost
Small Outline Surface Mount Package
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Maximum Ratings
Operating Temperature: -55
°
C to +150
°
C
Storage Temperature: -55
°
C to +150
°
C
Maximum Thermal Resistance; 357K/W Junction To Ambient
Electrical Characteristics @ 25
°
C Unless Otherwise Specified
Reverse Voltage
V
R
Average Rectified
Output Current
Power Dissipation
P
TOT
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
Reverse Recovery
Time
100V
150mA
I
O
350mW
1.0A
I
FSM
t=1s,
Non-Repetitive
V
F
820mV
I
FM
= 10mA;
T
J
= 25
°
C*
V
R
=50Volts
T
J
= 25
°
C
T
J
= 125
°
C
I
R
1.0
μ
A
100
μ
A
C
J
2pF
Measured at
1.0MHz, V
R
=0V
I
F
=10mA
V
R
= 0V
R
L
=500
T
rr
4nS
*Pulse test: Pulse width 300
μ
sec, Duty cycle 2%
A
B
C
D
E
F
G
H
J
.079
2.000
imm
.031
.800
.035
.900
.037
.950
.037
.950
M5C
C/A
A
C
Pin Configuration
Top View
www.
mc c semi
.c om
K
omp
onents
21201 Itasca Street Chatsworth
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"#
"#
$ %
!
M C C
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| MMBD7000LT1 | Dual Switching Diode |
| MMBD7000 | DUAL SWITCHING DIODE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBD7000LT-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Switching Diode |
| MMBD7000LT1_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Switching Diode |
| MMBD7000LT1G | 功能描述:二極管 - 通用，功率，開關(guān) 100V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MMBD7000LT1G | 制造商:ON Semiconductor 功能描述:Small Signal Diode |
| MMBD7000LT1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Switching Diode These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS |
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