參數資料
型號： MMBD352LT1
廠商： ON SEMICONDUCTOR
元件分類： 參考電壓二極管
英文描述： Dual Hot Carrier Mixer Diodes
中文描述： SILICON, UHF BAND, MIXER DIODE, TO-236AB
封裝： CASE 318-08, TO-236, 3 PIN
文件頁數： 1/4頁
文件大小： 41K
代理商： MMBD352LT1
Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UHF mixer applications
but are suitable also for use in detector and ultra–fast switching
circuits.
Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA
MAXIMUM RATINGS
(EACH DIODE)
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
7.0
VCC
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
PD
556
°
C/W
Total Device Dissipation
Alumina Substrate(2) TA = 25
°
C
Derate above 25
°
C
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
TJ, Tstg
417
°
C/W
Junction and Storage Temperature
–55 to +150
°
C
DEVICE MARKING
MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Forward Voltage
(IF = 10 mAdc)
VF
—
0.60
V
Reverse Voltage Leakage Current (Note 3.)
(VR = 3.0 V)
(VR = 7.0 V)
IR
—
—
0.25
10
A
Capacitance
(VR = 0 V, f = 1.0 MHz)
C
—
1.0
pF
1. FR–5 = 1.0
2. Alumina = 0.4
3. For each individual diode while the second diode is unbiased.
0.75
0.3
0.062 in.
0.024 in. 99.5% alumina.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 4
1
Publication Order Number:
MMBD352LT1/D
MMBD352LT1
MMBD353LT1
MMBD354LT1
MMBD355LT1
1
2
3
MMBD352LT1
CASE 318–08, STYLE 11
SOT–23 (TO–236AB)
1
ANODE
3
CATHODE/ANODE
2
CATHODE
MMBD353LT1
CASE 318–08, STYLE 19
SOT–23 (TO–236AB)
1
CATHODE
3
CATHODE/ANODE
2
ANODE
MMBD354LT1
CASE 318–08, STYLE 9
SOT–23 (TO–236AB)
3
CATHODE
2
ANODE
ANODE
1
ANODE
3
CATHODE
1
2
CATHODE
MMBD355LT1
CASE 318–08, STYLE 12
SOT–23 (TO–236AB)
相關PDF資料
PDF描述
MMBD352WT1 Dual Shottky Barrier Diode
MMBD355LT1 Dual Hot Carrier Mixer Diodes
MMBD352 Dual Hot Carrier Mixer Diodes
MMBD352LT1 Dual Hot Carrier Mixer Diodes
MMBD352WT1 Dual Schottky Barrier Diode
相關代理商/技術參數
參數描述
MMBD352LT1_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Hot Carrier Mixer Diodes
MMBD352LT1G 功能描述:整流器 7V 225mW Dual RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
MMBD352LT1G_07 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Hot Carrier Mixer Diodes
MMBD352LT3 功能描述:整流器 7V 225mW Dual RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
MMBD352LT3G 功能描述:整流器 7V 225mW Dual RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
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