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參數(shù)資料
| 型號(hào)： | MMBD2838S62Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.2 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 22K |
| 代理商： | MMBD2838S62Z |
MMBD2838
MMBD2838, Rev. A
MMBD2838
Small Signal Diode
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
2002 Fairchild Semiconductor Corporation
3
1
2
SOT-23
1
2
3
A6.
Absolute Maximum Ratings*
T
A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
RRM
Maximum Repetitive Reverse Voltage
75
V
I
F(AV)
Average Rectified Forward Current
200
mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
T
stg
Storage Temperature Range
-55 to +150
°C
T
J
Operating Junction Temperature
-55 to +150
°C
Thermal Characteristics
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
P
D
Power Dissipation
350
mW
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
Symbol
Parameter
Test Conditions
Min
Max
Units
V
R
Breakdown Voltage
I
R = 100 A
75
V
F
Forward Voltage
I
F = 50 mA
I
F = 100 mA
1.0
1.2
V
I
R
Reverse Current
V
R = 50 V
100
nA
C
T
Total Capacitance
V
R = 0, f = 1.0 MHz
4.0
pF
t
rr
Reverse Recovery Time
I
F = IR = 10 mA, IRR = 1.0 mA,
R
L = 100
4.0
ns
Connection Diagram
12
3
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