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參數(shù)資料
| 型號(hào)： | MMBD2010T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | SC-70, 3 PIN |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 116K |
| 代理商： | MMBD2010T1 |
MMBD1010LT1 MMBD2010T1 MMBD3010T1
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
CASE 318–08
ISSUE AF
SOT–23 (TO–236AB)
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
D
J
K
L
A
C
B S
H
G
V
3
1
2
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.1102
0.1197
2.80
3.04
INCHES
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0140
0.0285
0.35
0.69
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.1039
2.10
2.64
V
0.0177
0.0236
0.45
0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
CASE 419–02
ISSUE H
SC–70/SOT–323
STYLE 5:
PIN 1. ANODE
2. ANODE
3. CATHODE
C
R
N
A
L
D
G
V
S
B
H
J
K
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.071
0.087
1.80
2.20
B
0.045
0.053
1.15
1.35
C
0.035
0.049
0.90
1.25
D
0.012
0.016
0.30
0.40
G
0.047
0.055
1.20
1.40
H
0.000
0.004
0.00
0.10
J
0.004
0.010
0.10
0.25
K
0.017 REF
0.425 REF
L
0.026 BSC
0.650 BSC
N
0.028 REF
0.700 REF
R
0.031
0.039
0.80
1.00
S
0.079
0.087
2.00
2.20
V
0.012
0.016
0.30
0.40
0.05 (0.002)
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