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參數(shù)資料
| 型號： | MMBD1505D87Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.2 A, 200 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 43K |
| 代理商： | MMBD1505D87Z |
MMBD1501/A
/
1503/A
/
1504/A
/
1505/A
MMBD1500 series, Rev. B2
Small Signal Diodes
MMBD1501/A / 1503/A / 1504/A / 1505/A
Absolute Maximum Ratings*
T
A = 25°C unless otherwise noted
MARKING
MMBD1501 11
MMBD1501A A11
MMBD1503 13
MMBD1503A A13
MMBD1504 14
MMBD1504A A14
MMBD1505 15
MMBD1505A A15
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
2001 Fairchild Semiconductor Corporation
Thermal Characteristics
Electrical Characteristics T
A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
P
D
Power Dissipation
350
mW
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
Symbol
Parameter
Value
Units
V
RRM
Maximum Repetitive Reverse Voltage
200
V
I
F(AV)
Average Rectified Forward Current
200
mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
T
stg
Storage Temperature Range
-55 to +150
°C
T
J
Operating Junction Temperature
150
°C
1
2
3
11
3
1
2
SOT-23
Connection Diagrams
1501
1503
1504
1505
11
3
2
1
2
3
1
Symbol
Parameter
Test Conditions
Min
Max
Units
VR
Breakdown Voltage
IR = 5.0 A
200
V
F
Forward Voltage
I
F = 1.0 mA
IF = 10 mA
I
F = 50 mA
IF = 100 mA
I
F = 200 mA
I
F = 300 mA
620
720
800
830
0.87
0.90
720
830
890
930
1.1
1.15
mV
V
IR
Reverse Current
VR = 125 V
V
R = 125 V, TA = 150°C
VR = 180 V
VR = 180 V, TA = 150°C
1.0
3.0
10
5.0
nA
A
nA
A
C
T
Total Capacitance
VR = 0, f = 1.0 MHz
4.0
PF
2NC
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