- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄39703 > MMBD1401S62Z (FAIRCHILD SEMICONDUCTOR CORP) 0.2 A, 200 V, SILICON, SIGNAL DIODE PDF資料下載
參數(shù)資料
| 型號： | MMBD1401S62Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.2 A, 200 V, SILICON, SIGNAL DIODE |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 29K |
| 代理商： | MMBD1401S62Z |
MMBD1401
/
1403
/
1404
/
1405
MMBD1400 series, Rev. C
2001 Fairchild Semiconductor Corporation
Small Signal Diodes
Absolute Maximum Ratings*
T
A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
MMBD1401 / 1403 / 1404 / 1405
Thermal Characteristics
Electrical Characteristics T
A = 25°C unless otherwise noted
MARKING
MMBD1401 29
MMBD1403
32
MMBD1404 35
MMBD1405
34
Symbol
Parameter
Value
Units
V
RRM
Maximum Repetitive Reverse Voltage
200
V
I
F(AV)
Average Rectified Forward Current
200
mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
T
stg
Storage Temperature Range
-55 to +150
°C
T
J
Operating Junction Temperature
150
°C
Symbol
Parameter
Value
Units
P
D
Power Dissipation
350
mW
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
1
2
3
29
3
1
2
SOT-23
Connection Diagrams
1401
1403
1404
1405
11
3
2
1
2
3
1
Symbol
Parameter
Test Conditions
Min
Max
Units
V
R
Breakdown Voltage
I
R = 100 A
200
V
VF
Forward Voltage
IF = 10 mA
IF = 50 mA
IF = 200 mA
IF = 300 mA
760
800
920
1.0
1.1
mV
V
IR
Reverse Current
VR = 120 V
VR = 175 V
40
100
nA
CT
Total Capacitance
V
R = 0, f = 1.0 MHz
2.0
pF
t
rr
Reverse Recovery Time
I
F = IR = 30 mA, IRR = 3.0 mA,
R
L = 100
50
ns
2NC
相關PDF資料 |
PDF描述 |
|---|---|
| MMBD1403L99Z | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
| MMBD1404S62Z | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
| MMBD1401D87Z | 0.2 A, SILICON, SIGNAL DIODE, TO-236AB |
| MMBD1404-TP | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| MMBD1405 | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBD1402 | 制造商:JGD 制造商全稱:Jinan Gude Electronic Device 功能描述:SURFACE MOUNT SWITCHING DIODES |
| MMBD1403 | 功能描述:整流器 High Voltage General Purpose RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MMBD1403_L99Z | 功能描述:整流器 High Voltage General Purpose Diode RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MMBD1403_L99Z_Q | 功能描述:整流器 High Voltage General Purpose Diode RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MMBD1403_Q | 功能描述:整流器 High Voltage General Purpose RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。