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參數(shù)資料
| 型號： | MMB3904LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistor(NPN Silicon) |
| 中文描述： | 通用晶體管（NPN硅） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 265K |
| 代理商： | MMB3904LT1 |
LESHAN RADIO COMPANY, LTD.
O11–1/6
1
3
2
MMBT3904LT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
General Purpose Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
40
Vdc
Collector–Base Voltage
V
CBO
60
Vdc
Emitter–Base Voltage
V
EBO
6.0
Vdc
Collector Current — Continuous
I
C
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
P
D
Max
225
Unit
mW
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1.8
556
300
mW/°C
°C/W
mW
R
θ
JA
P
D
2.4
417
mW/°C
°C/W
°C
R
θ
JA
T
J
, T
stg
–55 to +150
DEVICE MARKING
MMBT3904LT1 = 1AM
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 10
μ
Adc, I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 10
μ
Adc, I
= 0)
Base Cutoff Current
( V
CE
= 30 Vdc, V
EB
= 3.0 Vdc, )
Collector Cutoff Current
( V
CE
= 30Vdc, I
EB
= 3.0Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
<
300
μ
s, Duty Cycle
<
2.0%.
V
(BR)CEO
40
—
Vdc
V
(BR)CBO
60
—
Vdc
V
(BR)EBO
6.0
—
Vdc
I
BL
—
50
nAdc
I
CEX
—
50
nAdc
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