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參數(shù)資料
| 型號： | MM908E621 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | Integrated Quad Half-Bridge and Triple High-Side with Embedded MCU and LIN for High End Mirror |
| 中文描述： | 綜合四半橋和三高的嵌入式微控制器和LIN高端側(cè)鏡 |
| 文件頁數(shù)： | 54/62頁 |
| 文件大?。?/td> | 719K |
| 代理商： | MM908E621 |
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Analog Integrated Circuit Device Data
58
Freescale Semiconductor
908E621
Additional Information
Thermal Addendum
ADDITIONAL INFORMATION
THERMAL ADDENDUM
INTEGRATED QUAD H-BRIDGE AND TRIPLE HIGH-SIDE DRIVER
WITH EMBEDDED MCU AND LIN FOR MIRROR
Thermal Addendum
Introduction
This thermal addendum ia provided as a supplement to the MM908E621
technical data sheet. The addendum provides thermal performance information
that may be critical in the design and development of system applications. All
electrical, application and packaging information is provided in the data sheet.
Package and Thermal Considerations
This MM908E621 is a dual die package. There are two heat sources in the
package independently heating with P1 and P2. This results in two junction
temperatures, TJ1 and TJ2, and a thermal resistance matrix with RθJAmn.
For m, n =1, RθJA11 is the thermal resistance from Junction 1 to the reference
temperature while only heat source 1 is heating with P1.
For m =1, n =2, RθJA12 is the thermal resistance from Junction 1 to the
reference temperature while heat source 2 is heating with P2. This applies to
RθJ21 and RθJ22, respectively.
The stated values are solely for a thermal performance comparison of one
package to another in a standardized environment. This methodology is not
meant to and will not predict the performance of a package in an application-
specific environment. Stated values were obtained by measurement and
simulation according to the standards listed below.
54-TERMINAL
SOICW-EP
908E621
DWB SUFFIX
98ARL105910
54-TERMINAL SOICW-EP
Note For package dimensions, refer to the
908E621 device datasheet.
TJ1
TJ2
=
RθJA11
RθJA21
RθJA12
RθJA22
.
P1
P2
Standards
Figure 34. Thermal Land Pattern for Direct Thermal
Attachment Per JEDEC JESD51-5
Table 24. Thermal Performance Comparison
Thermal
Resistance
1 = Power Chip, 2 = Logic Chip
[
°C/W]
m
=1,
n
=1
m
=1, n =2
m
=2, n =1
m
=2,
n
=2
RθJAmn
23
20
24
RθJBmn
9.0
6.0
10
RθJAmn
52
47
52
RθJCmn
1.0
0
2.0
Notes:
1.
Per JEDEC JESD51-2 at natural convection, still air
condition.
2.
2s2p thermal test board per JEDEC JESD51-7and
JESD51-5.
3.
Per JEDEC JESD51-8, with the board temperature on the
center trace near the power outputs.
4.
Single layer thermal test board per JEDEC JESD51-3 and
JESD51-5.
5.
Thermal resistance between the die junction and the
exposed pad, “infinite” heat sink attached to exposed pad.
1.0
0.2
Soldermast
openings
Thermal vias
connected to top
buried plane
54 Terminal SOIC-EP
0.65 mm Pitch
17.9 mm x 7.5 mm Body
10.3 mm x 5.1 mm Exposed Pad
* All measurements
are in millimeters
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MM908E621_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Integrated Quad Half-bridge and Triple High Side with Embedded MCU and LIN for High End Mirror |
| MM908E621ACDWB | 功能描述:8位微控制器 -MCU QUAD H-B/3-HS W/MCU & LI RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MM908E621ACDWB/R2 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Integrated Quad Half-bridge and Triple High Side with Embedded MCU and LIN for High End Mirror |
| MM908E621ACDWBR2 | 功能描述:8位微控制器 -MCU QUAD HB / TRIPLE HS 841B RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MM908E621ACPEK | 功能描述:8位微控制器 -MCU QUAD H-B/3-HS W/MCU & LI RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
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