參數(shù)資料
型號(hào): MM3168AFBE
廠商: MITSUMI ELECTRIC CO LTD
元件分類: XO, clock
英文描述: VCXO, CLOCK, 27 MHz, CMOS OUTPUT
封裝: SOP-8D, 8 PIN
文件頁(yè)數(shù): 4/5頁(yè)
文件大?。?/td> 47K
代理商: MM3168AFBE
MITSUMI
For VCXO MM3168 Series
Absolute Maximum Ratings (Ta=25°C)
Item
Symbol
Ratings
Units
Strage temperature
TSTG
-40~+125
°C
Operating temperature
TOPR
0~+70
°C
Supply voltage
VDDmax.
7
V
All Inputs & outputs
VINmax.
-0.3 <
= VIN <
= VDD
V
Allowable loss
Pd
340
mW
Recommended Operating Conditions
Item
Symbol
Ratings
Units
Operating temperature
TOPR
0~+70
°C
Supply voltage
VOPR
3.15~3.45
V
Input Voltage
VIN
0.0~3.3
V
C0
3.0
pF
Crystal parameters
C1
11.4
fF
CI
17
L1
3
mH
Electrical Characteristics (Except where noted otherwise,Ta=25°C, VDD=3.3V±5%)
Item
Symbol
Measurement conditions
Min. Typ. Max. Units
DC Electrical Characteristics
Operating supplycurrent
IDD
No load
3.5
7
mA
Output voltage H
VOH
Io=5mA
2.4
V
Output voltage L
VOL
Io=5mA
0.4
V
Short circuit current
Ios
±50
mA
AC Electrical Characteristics
VIN control voltage
VIA
0
VDD
V
Output frequency
fVIN=1.2V
26.9992
27
27.0008 MHz
Crystal pullability
fp
0V<VIN<3.3V *Note 1
±100
ppm
VCXO gain
fg
VIN=1.2V±1.0V *Note 1
90
110
130 ppm/V
Output rise time
tr
0.8V to 2.0V, CL=15pF
2
ns
Output fall time
tf
2.0V to 0.8V, CL=15pF
2
ns
Output clock duty cycle
tDuty
CL=15pF
40
50
60
%
Maximum output jitter, short term
Tj
CL=15pF
±150
ps
*Note 1 : External crystal device must conform with Pullabel Crystal Specifications listed on this page.
*Note 2 : The crystal must be mounted as close to the device as possible and should be on the same side of
the PCB as the MM3168.
Any external parasitic capacitance will reduce the pull range of the VCXO.In order to maximize the
range, it is important to minimize parasitic capacitance related ot X1 and X2 on the PCB.
The ground and power planes should be cut out under the X1 and X2 pins and the Crystal.
There should be no vias between the crystal pins and X1 and X2 device pins.
There should be no signal traces underneath or close to the crystal.
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