參數(shù)資料
型號： MM121-50
廠商： MICROSEMI CORP
元件分類： JFETs
英文描述： 24 A, 500 V, 0.23 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： HERMETIC SEALED, POWER MODULE-16
文件頁數(shù)： 3/4頁
文件大?。?/td> 92K
代理商： MM121-50
Reverse Transfer Capacitance
Crss
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
1200
800
285
280
135
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
td(on)
tri
td(off)
tfi
VGS = 10 V, VDS= 50 V, ID = 30 A, RG = 1
VGS = 10 V, VDS= 50 V, ID = 37.5 A, RG = 2
VGS = 10 V, VDS= 100 V, ID = 25 A, RG = 2
VGS = 10 V, VDS= 150 V, ID = 20 A, RG = 2
VGS = 10 V, VDS= 250 V, ID = 12 A, RG = 2
VGS = 10 V, VDS= 50 V, ID = 30 A, RG = 1
VGS = 10 V, VDS= 50 V, ID = 37.5 A, RG = 2
VGS = 10 V, VDS= 100 V, ID = 25 A, RG = 2
VGS = 10 V, VDS= 150 V, ID = 20 A, RG = 2
VGS = 10 V, VDS= 250 V, ID = 12 A, RG = 2
VGS = 10 V, VDS= 50 V, ID = 30 A, RG = 1
VGS = 10 V, VDS= 50 V, ID = 37.5 A, RG = 2
VGS = 10 V, VDS= 100 V, ID = 25 A, RG = 2
VGS = 10 V, VDS= 150 V, ID = 20 A, RG = 2
VGS = 10 V, VDS= 250 V, ID = 12 A, RG = 2
VGS = 10 V, VDS= 50 V, ID = 30 A, RG = 1
VGS = 10 V, VDS= 50 V, ID = 37.5 A, RG = 2
VGS = 10 V, VDS= 100 V, ID = 25 A, RG = 2
VGS = 10 V, VDS= 150 V, ID = 20 A, RG = 2
VGS = 10 V, VDS= 250 V, ID = 12 A, RG = 2
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
40
20
16
70
60
15
60
33
130
80
75
65
55
60
20
45
30
tbd
30
25
30
25
-
110
20
90
45
-
110
90
100
80
-
90
25
90
40
ns
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Qg(on)
Qgs
Qgd
V GS = 10 V, VDS= 50 V, ID= 40 A
V GS = 10 V, VDS= 50 V, ID= 37.5 A
V GS = 10 V, VDS= 100 V, ID= 25 A
V GS = 10 V, VDS= 150 V, ID= 20 A
V GS = 10 V, VDS= 250 V, ID= 12 A
V GS = 10 V, VDS= 50 V, ID= 40 A
V GS = 10 V, VDS= 50 V, ID= 37.5 A
V GS = 10 V, VDS= 100 V, ID= 25 A
V GS = 10 V, VDS= 150 V, ID= 20 A
V GS = 10 V, VDS= 250 V, ID= 12 A
V GS = 10 V, VDS= 50 V, ID= 40 A
V GS = 10 V, VDS= 50 V, ID= 37.5 A
V GS = 10 V, VDS= 100 V, ID= 25 A
V GS = 10 V, VDS= 150 V, ID= 20 A
V GS = 10 V, VDS= 250 V, ID= 12 A
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
240
180
190
180
135
30
36
35
30
120
85
95
80
65
tbd
260
220
200
160
tbd
70
50
40
tbd
160
110
105
85
nC
Body diode forward voltage (1)
V SD
V GS= 0, IF= IS
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
1.5
1.75
1.5
V
Body diode reverse recovery time
trr
IE= 10 A, dIE/dt= 100 A/us,
TJ= 25 C
TJ= 125 C
TJ= 25 C
TJ= 125 C
TJ= 25 C
TJ= 125 C
TJ= 25 C
TJ= 125 C
TJ= 25 C
TJ= 125 C
MM121-07
MM121-10
MM121-20
MM121-30
MM121-50
150
-
250
200
300
200
300
200
350
250
400
ns
Body diode reverse recovery charge
Qrr
IE= 10 A, dIE/dt= 100 A/us,
TJ= 25 C
TJ= 125 C
TJ= 25 C
TJ= 125 C
TJ= 25 C
TJ= 125 C
MM121-07
MM121-10
MM121-20
tbd
1.5
2.6
C
相關(guān)PDF資料
PDF描述
MM121-50T 24 A, 500 V, 0.23 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
MM121-10 75 A, 100 V, 0.02 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
MM121-20 50 A, 200 V, 0.045 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
MM121-10T 75 A, 100 V, 0.02 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
MM121-07 76 A, 70 V, 0.012 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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