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參數(shù)資料
| 型號(hào)： | MLN2030SS |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 17K |
| 代理商： | MLN2030SS |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 50 mA
BV
CER
I
C
= 50 mA
BV
EBO
I
E
= 10 mA
I
CES
V
E
= 28 V
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
35
60
4.0
10
UNITS
V
V
V
mA
---
R
BE
= 10
5
100
C
ob
V
CB
= 28 V
f = 1.0 MHz
5.0
pF
P
GE
V
CE
= 18 V
P
OUT
= 1.0 W
I
CQ
= 220 mA f = 2.0 GHz
10
dB
NPN SILICON RF POWER TRANSISTOR
MLN2030SS
DESCRIPTION:
The
ASI MLN2030SS
is Designed
for
FEATURES:
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
10 A
V
CB
60 V
V
CE
35 V
P
DISS
140 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
T
J
T
STG
-65
O
C to +150
O
C
θ
JC
20
O
C/W
PACKAGE STYLE .205 4L STUD
ORDER CODE: ASI10633
A
B
H
E
F
.098 / 2.500
.161 / 4.100
.028 / 0.700
.976 / 24.800
.138 / 3.500
.976 / 24.800
inches / mm
MINIMUM
A
G
F
E
D
C
B
1.000 / 25.4000
.110 / 2.800
.196 / 5.000
1.000 / 25.4000
MAXIMUM
inches / mm
.031 / 0.800
C
D
H
I
J
.200 / 5.100
.425 / 10.800
.004 / 0.100
.006 / 0.150
.465 / 11.800
2.05 / 5.200
G
J
#8-32UNC
.200 / 5.100
.208 / 5.300
DIM
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