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參數(shù)資料
| 型號： | MLD685D |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 85 A, 60 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MT100, TO-3P, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 351K |
| 代理商： | MLD685D |
http://www.sanken-ele.co.jp
SANKEN ELECTRIC
ＭＬＤ６８５Ｄ
Feb. 2011
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
Page 2
Electrical characteristics
(Ta=25°C）
Limits
Characteristic
Symbol
Test Conditions
MIN
TYP
MAX
Unit
Drain to Source breakdown Voltage
V(BR)DSS
ID=100μA,VGS=0V
60
V
Gate to Source Leakage Current
IGSS
VGS=±20V
±10
μA
Drain to Source Leakage Current
IDSS
VDS=60V, VGS=0V
100
μA
Gate Threshold Voltage
VTH
VDS=10V, ID=1mA
2.0
2.5
3.0
V
Forward Transconductance
Re(yfs)
VDS=10V, ID=42A
30
S
Static Drain to Source On-Resistance
RDS(ON)
ID=42A, VGS=10V
4.0
4.7
m
Input Capacitance
Ciss
11500
Output Capacitance
Coss
1500
Reverse Transfer Capacitance
Crss
VDS=10V
VGS=0V
f=1MHz
1100
pF
Turn-On Delay Time
td(on)
60
Rise Time
tr
25
Turn-Off Delay Time
td(off)
370
Fall Time
tf
ID=42A, VDD 16V
RG=22, VGS=10V
See Fig.2
65
ns
Source-Drain Diode Forward Voltage
VSD
ISD=50A,VGS=0V
0.87
1.5
V
Source-Drain Diode Reverse Recovery
Time
trr
ISD=50A
ｄ
i/dt=100A/us
70
ns
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