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參數(shù)資料
| 型號(hào)： | ML |
| 廠商： | Littelfuse, Inc. |
| 英文描述： | Multilayer Transient Voltage Surge Suppressors |
| 中文描述： | 多層瞬態(tài)電壓浪涌抑制器 |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大?。?/td> | 182K |
| 代理商： | ML |
Multilayer Transient Voltage Surge Suppressors
ML Varistor Series
Surface Mount Varistors
146
www.littelfuse.com
Device Characteristics
At low current levels, the V-I curve of the multilayer transient voltage
suppressor approaches a linear (ohmic) relationship and shows a
temperature dependent effect (Figure 10). At or below the maximum
working voltage, the suppressor is in a high resistance mode (approach-
ing 10
6
at its maximum rated working voltage). Leakage currents at
maximum rated voltage are below 50μA, typically 25μA; for 0402 size
below 10μA, typically 5μA.
Speed of Response
The Multilayer Suppressor is a leadless device. Its response time is not
limited by the parasitic lead inductances found in other surface mount
packages.The response time of the Zinc Oxide dielectric material is less
than 1 nanosecond and the ML can clamp very fast dV/dT events such
as ESD. Additionally, in
“
real world
”
applications, the associated circuit
wiring is often the greatest factor effecting speed of response.Therefore,
transient suppressor placement within a circuit can be considered
important in certain instances.
100%
1E
-9
1E
-8
SUPPRESSOR CURRENT (A
DC
)
10%
1E
-7
1E
-6
1E
-5
1E
-4
1E
-3
1E
-2
25
50
75
100
125
o
C
S
V
N
o
C
FIGURE 10. TYPICAL TEMPERATURE DEPENDANCE OF THE CHARACTERISTIC
CURVE IN THE LEAKAGE REGION
o
o
o
o
GRAINS
DEPLETION
REGION
FIRED CERAMIC
DIELECTRIC
METAL
ELECTRODES
DEPLETION
REGION
METAL END
TERMINATION
FIGURE 11. MULTILAYER INTERNAL CONSTRUCTION
Energy Absorption/Peak Current Capability
Energy dissipated within the ML is calculated by multiplying the clamping
voltage, transient current and transient duration. An important advantage
of the multilayer is its interdigitated electrode construction within the mass
of dielectric material.This results in excellent current distribution and the
peak temperature per energy absorbed is very low.The matrix of semicon-
ducting grains combine to absorb and distribute transient energy (heat)
(Figure 11).This dramatically reduces peak temperature; thermal stresses
and enhances device reliability.
As a measure of the device capability in energy and peak current
handling, the V26MLA1206A part was tested with multiple pulses at its
peak current rating (150A, 8/20μs). At the end of the test, 10,000 pulses
later, the device voltage characteristics are still well within specification
(Figure 13).
100
10
20
V26MLA1206
40
60
80
100
120
140
TEMPERATURE (
o
C)
C
V5.5MLA1206
0
-20
-40
-60
FIGURE 12. CLAMPING VOLTAGE OVER TEMPERATURE
(V
C
AT 10A)
100
10
0
V26MLA1206
2000
4000
6000
8000
10000
12000
NUMBER OF PULSES
V
FIGURE 13.
REPETITIVE PULSE CAPABILITY
PEAK CURRENT = 150A
8/20
μ
s DURATION, 30s BETWEEN PULSES
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