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參數(shù)資料
| 型號： | ML925J40F-11 |
| 元件分類： | 激光器 |
| 英文描述： | 1610 nm, LASER DIODE |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 210K |
| 代理商： | ML925J40F-11 |
MITSUBISHI LASER DIODES
ML9XX40 SERIES
Notice : Some parametric limits are subject to change
2.5Gbps
InGaAsP DFB LASER DIODE
Feb. 2005
MITSUBISHI
ELECTRIC
TYPE
NAME
DESCRIPTION
ML9XX40 series are uncooled DFB (Distributed Feedback) laser
diodes for 2.5Gbps transmission emitting light beam at 1470~1610nm.
λ/4 shifted grating structure is employed to obtain excellent SMSR
performance under 2.5Gbps modulation. Furthermore, ML9xx40 can
operate in the wide temperature range from 0oC to 85 oC without any
temperature control. They are well suited for light source in long
distance digital transmission application of coarse WDM.
APPLICATION
2.5Gbps long-haul transmission
Coarse WDM application
FEATURES
λ/4 shifted grating structure
Wide temperature range operation (0oC to 85oC)
High side-mode-suppression-ratio (typical 45dB)
High resonance frequency (typical 11GHz)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Ratings
Unit
Po
Output power
CW
6
mW
If
Forward current (Laser diode)
---
150
mA
VRL
Reverse voltage (Laser diode)
---
2
V
IFD
Forward current (Photo diode)
---
2
mA
VRD
Reverse voltage (Photo diode)
---
20
V
Tc
Case temperature
---
0 to +85
C
Tstg
Storage temperature
---
-40 to +100
C
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25C)
Symbol
Parameter
Test conditions
Min.
Typ. Max.
Unit
CW
---
10
15
<*1>
---
35
40
Ith
Threshold current
CW
Tc=85
C
<*2>
---
45
50
mA
CW, Po=5mW
---
35
45
<*1>
---
70
80
Iop
Operation current
CW, Po=5mW
Tc=85
C
<*2>
---
90
100
mA
Vop
Operating voltage
CW, Po=5mW
---
1.1
1.5
V
CW, Po=5mW
0.17
0.22
---
η
Slope efficiency
CW, Po=5mW <*3>
0.15
0.20
---
mW/mA
λp
Peak wavelength
CW, Po=5mW
<*4>,<*5>
nm
Side mode suppression ratio
CW, Po=5mW, Tc=0 to 85
C
35
45
---
dB
SMSR
Side mode suppression ratio(RF)
2.48832Gbps,Ib=Ith, Ipp=40mA
---
45
---
θ //
Beam divergence angle (parallel) <*6>
CW, Po=5mW
---
25
---
deg.
θ ┴
(perpendicular) <*6>
CW, Po=5mW
---
30
---
deg.
fr
Resonance frequency
2.48832Gbps,Ib=Ith, Ipp=40mA
---
11
---
GHz
tr,tf
Rise and Fall time <*7>
2.48832Gbps,Ib=Ith, Ipp=40mA
20%-80%
---
80
120
ps
Im
Monitoring output current (PD)
CW, Po=5mW,VRD=1V,RL=10
0.1
---
1.0
mA
Id
Dark current (PD)
VRD=5V
---
0.1
A
Ct
Capacitance (PD)
VRD=5V
---
10
20
pF
<*1> Applied to ML9xx40-04~09 and -12~17.
<*2> Applied to ML9xx40-10~11 and -18~19.
<*3> Applied to ML925J40F and ML920L40S.
<*6> Beam divergence is not applied to ML925J40F and ML920L40S.
<*7> Except influence of the 18mm lead.
ML925B40F / ML920J40S
ML925J40F / ML920L40S
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ML925J40F-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5Gbps InGaAsP DFB LASER DIODE |
| ML925J40F-13 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5Gbps InGaAsP DFB LASER DIODE |
| ML925J40F-14 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5Gbps InGaAsP DFB LASER DIODE |
| ML925J40F-15 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5Gbps InGaAsP DFB LASER DIODE |
| ML925J40F-16 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5Gbps InGaAsP DFB LASER DIODE |
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