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參數(shù)資料
| 型號： | ML610Q482P-NNNTBZ03A |
| 廠商： | LAPIS SEMICONDUCTOR CO LTD |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 8-BIT, FLASH, 4.2 MHz, RISC MICROCONTROLLER, PQFP48 |
| 封裝： | 7 X 7 MM, 0.50 MM PITCH, PLASTIC, TQFP-48 |
| 文件頁數(shù)： | 6/27頁 |
| 文件大?。?/td> | 353K |
| 代理商： | ML610Q482P-NNNTBZ03A |
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FEDL610Q482P-01
OKI SEMICONDUCTOR
ML610Q482P
14/27
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
(VSS = 0V)
Parameter
Symbol
Condition
Rating
Unit
Power supply voltage 1
VDD
Ta = 25
°C
0.3 to +4.6
V
Power supply voltage 2
VPP
Ta = 25
°C
0.3 to +9.5
V
Power supply voltage 3
VDDL
Ta = 25
°C
0.3 to +3.6
V
Power supply voltage 4
VDDX
Ta = 25
°C
0.3 to +3.6
V
Input voltage
VIN
Ta = 25
°C
0.3 to VDD+0.3
V
Output voltage
VOUT
Ta = 25
°C
0.3 to VDD+0.3
V
Output current 1
IOUT1
Port3–A, Ta = 25
°C
12 to +11
mA
Output current 2
IOUT2
Port2, Ta = 25
°C
12 to +20
mA
Power dissipation
PD
Ta = 25
°C
1.16
W
Storage temperature
TSTG
55 to +150
°C
RECOMMENDED OPERATING CONDITIONS
(VSS = 0V)
Parameter
Symbol
Condition
Range
Unit
Operating temperature
TOP
40 to +85
°C
Operating voltage
VDD
1.1 to 3.6
V
VDD = 1.1 to 3.6V
30k to 36k
VDD = 1.3 to 3.6V
30k to 650k
Operating frequency (CPU)
fOP
VDD = 1.8 to 3.6V
30k to 4.2M
Hz
Low-speed crystal oscillation
frequency
fXTL
32.768k/38.4k
Hz
CDL
0 to 12
Low-speed crystal oscillation
external capacitor
CGL
0 to 12
pF
High-speed crystal/ceramic
oscillation frequency
fXTH
4.0M / 4.096M
Hz
CDH
24
High-speed crystal oscillation
external capacitor
CGH
24
pF
CL0
1.0
±30%
Capacitor externally connected to
VDDL pin
CL1
0.1
±30%
μF
Capacitor externally connected to
VDDX pin
CX
0.1
±30%
μF
OPERATING CONDITIONS OF FLASH ROM
(VSS = 0V)
Parameter
Symbol
Condition
Range
Unit
Operating temperature
TOP
At write/erase
0 to +40
°C
VDD
At write/erase
*1
2.75 to 3.6
VDDL
At write/erase
*1
2.5 to 2.75
Operating voltage
VPP
At write/erase
*1
7.7 to 8.3
V
Write cycles
CEP
10
cycles
Data retention
YDR
10
years
*1: Those voltages must be supplied to V
DDL pin and VPP pin when programming and eraseing Flash ROM.
VPP pin has an internal pulldown resister.
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