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參數(shù)資料
| 型號： | ML46580S-992 |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | K BAND, 18 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| 封裝： | DIE |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 463K |
| 代理商： | ML46580S-992 |
M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088,
Fax +85 2 2111 8087 s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
The Preliminary Specification Data Sheet contains typical electrical specifications which may change prior to final introduction.
V1.00
Beam Lead Gallium Arsenide Tuning Varactor Diode
ML46580S-992
Features
Constant Gamma of 1.25
Strong Beam Construction
Low Parasitic Capacitance
High Q
Close Capacitance Tracking
Description
The ML46580S-992 is a Gallium Arsenide Beam Lead Tuning
Varactor having a Hyperabrupt junction with a resultant constant
gamma characteristic. The constant gamma, high Q values and the
elimination of package parasitics are extremely beneficial for the
linear tuning of voltage controlled oscillators at frequencies above
20 GHz.
This device has been tested previously for space application in
accordance with the requirements of ESA Generic Specifications
PSS-01-608 and ESA/SCC 5010.
High Reliability Beam Lead diodes can be supplied using the
same procedures established for chip diodes. These procedures
detailed in M/A-COM control document MP3021-001 incorpo-
rate the essential elements of ESA/SCC 5010.
M/A-COM can also provide Gallium Arsenide Beam Lead Tun-
ing Varactor diodes with a constant gamma of 1.0 and also with
capacitance up to 2pF.
The Semiconductor Master Catalogue, available on request, con-
tains detailed information of the following additional Tuning
Varactor types many of which are suitable for space application.
Package Outline
High Reliability Semiconductor – Beam Lead
Gallium Arsenide Tuning Varactor Diode
ML46580S-992
Maximum Ratings (Tamb = +25°C)
C
E
BA
B
D
F
CATHODE BEAM
DIE THICKNESS
INCHES
MILLIMETERS
DIM
Min.
Max.
Min.
Max.
A
0.012
0.014
0.305
0.356
B
0.010
—
0.254
—
C
0.006
0.008
0.152
0.203
D
0.004
0.006
0.102
0.152
E
0.007
0.009
0.178
0.229
F
—
0.004
0.305
0.1026
Surface Mount (SOT-23) Tuning Varactors
Axial Lead Tuning Varactors
Silicon Abrupt and Hyperabrupt Junction Tuning Varactors
GaAs Abrupt Junction Tuning Varactors
GaAs Hyperabrupt Junction Tuning Varactors with Constant
Gamma 0.75, 1.25, 1.5
No.
Characteristics
Symbol
Maximum Ratings
Units
Remarks
1
Power Dissipation
P
O
25.0
mW
See Note 1
2
Reverse Voltage
V
R
18
V
3
Forward Current
I
F
50
mA
See Note 2
4
Operating Temperature
T
OP
-65 to +150
°C
5
Storage Temperature
T
STO
-65 to +150
°C
Notes:
1. Derate linearly to 0 mW from 25°C to 150°C
2. Derate linearly to 0 mA from 25°C to 150°C
Preliminary Specifications
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