參數(shù)資料
型號： MKI65-06A7
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： 100 A, 600 V, N-CHANNEL IGBT
封裝： MODUL-14
文件頁數(shù)： 1/2頁
文件大?。?/td> 66K
代理商： MKI65-06A7
2005 IXYS All rights reserved
1 - 2
B3
0548
MKI 65-06 A7
MKI 65-06 A7T
IXYS reserves the right to change limits, test conditions and dimensions.
Features
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
UL registered, E 72873
Advantages
space savings
reduced protection circuits
package designed for wave soldering
Typical Applications
motor control
- DC motor armature winding
- DC motor excitation winding
- synchronous motor excitation winding
supply of transformer primary winding
- power supplies
- welding
- X-ray
- UPS
- battery charger
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ = 25°C to 150°C
600
V
V
GES
± 20
V
I
C25
T
C =
25°C
100
A
I
C80
T
C =
80°C
67
A
RBSOA
V
GE = ±15 V; RG = 15 ; TVJ = 125°C
I
CM
= 150
A
Clamped inductive load; L = 100 H
V
CEK
≤ V
CES
t
SC
V
CE = VCES; VGE = ±15 V; RG = 15 ; TVJ = 125°C
10
s
(SCSOA)
non-repetitive
P
tot
T
C = 25°C
320
W
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C = 65 A; VGE = 15 V; TVJ =
25°C
2.0
2.5
V
T
VJ = 125°C
2.5
V
V
GE(th)
I
C = 1.5 mA; VGE = VCE
4.5
6.5
V
I
CES
V
CE = VCES; VGE = 0 V; TVJ =
25°C
0.8
mA
T
VJ = 125°C
0.8
mA
I
GES
V
CE = 0 V; VGE = ± 20 V
200
nA
t
d(on)
150
ns
t
r
60
ns
t
d(off)
450
ns
t
f
40
ns
E
on
3.5
mJ
E
off
2.3
mJ
C
ies
V
CE = 25 V; VGE = 0 V; f = 1 MHz
4200
pF
Q
Gon
V
CE = 300V; VGE = 15 V; IC = 100 A
260
nC
R
thJC
(per IGBT)
0.39 K/W
Inductive load, T
VJ = 125°C
V
CE = 300 V; IC = 65 A
V
GE = ±15 V; RG = 15
I
C25
= 100 A
V
CES
= 600 V
V
CE(sat) typ = 2.0 V
IGBT Modules
H-Bridge
Short Circuit SOA Capability
Square RBSOA
13
1
2
3
4
17
9
10
11
12
16
14
D1
D2
D5
D6
T1
T2
T5
T6
T
Type:
NTC - Option:
MKI 65-06 A7
without NTC
MKI 65-06 A7T
with NTC
Preliminary data
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MKI65-06A7T 功能描述:分立半導(dǎo)體模塊 65 Amps 600V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風(fēng)格:Screw 封裝 / 箱體:DT61 封裝:
MKI75-06A7 功能描述:IGBT 模塊 75 Amps 600V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
MKI75-06A7T 功能描述:IGBT 模塊 75 Amps 600V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
MKI75-12E8 功能描述:IGBT 模塊 75 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
MKI80-06T6K 功能描述:IGBT 模塊 80 Amps 600V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
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