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參數(shù)資料
| 型號(hào)： | MKI50-06A7 |
| 廠商： | IXYS CORP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | IGBT Modules H-Bridge |
| 中文描述： | 72 A, 600 V, N-CHANNEL IGBT |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 78K |
| 代理商： | MKI50-06A7 |
1 - 4
2002 IXYS All rights reserved
2
IXYS reserves the right to change limits, test conditions and dimensions.
Features
NPT IGBT technology
low saturation voltage
low switching losses
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
Advantages
space savings
reduced protection circuits
package designed for wave soldering
Typical Applications
motor control
- DC motor armature winding
- DC motor excitation winding
- synchronous motor excitation winding
supply of transformer primary winding
- power supplies
- welding
- X-ray
- UPS
- battery charger
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C
600
V
V
GES
±
20
V
I
C25
I
C80
T
C
= 25°C
T
C
= 80°C
72
50
A
A
RBSOA
V
=
±
15 V; R
= 22
; T
= 125°C
Clamped inductive load; L = 100 μH
I
CM
= 100
V
CEK
≤
V
CES
A
t
(SCSOA)
V
= V
; V
GE
=
±
15 V; R
G
= 22
; T
VJ
= 125°C
non-repetitive
10
μs
P
tot
T
C
= 25°C
225
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 50 A; V
GE
= 15 V; T
VJ
= 25°C
1.9
2.2
2.4
V
V
T
VJ
= 125°C
V
GE(th)
I
C
= 1 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.6
mA
mA
0.7
I
GES
V
CE
= 0 V; V
GE
=
±
20 V
200
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
50
60
300
30
2.3
1.7
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 300V; V
GE
= 15 V; I
C
= 50 A
2800
120
pF
nC
R
thJC
(per IGBT)
0.55 K/W
Inductive load, T
= 125°C
V
CE
= 300 V; I
C
= 50 A
V
GE
= ±15 V; R
G
= 22
I
C25
V
CES
V
CE(sat) typ.
= 1.9 V
= 72 A
= 600 V
IGBT Modules
H-Bridge
Short Circuit SOA Capability
Square RBSOA
MKI 50-06 A7
Preliminary Data
13
17
1
2
3
4
9
10
11
12
16
14
T1
D1
T2
D2
T5
D5
T6
D6
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| MKI50-06A7T | 功能描述:分立半導(dǎo)體模塊 50 Amps 600V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類(lèi)型:Phase Controls 安裝風(fēng)格:Screw 封裝 / 箱體:DT61 封裝: |
| MKI50-12E7 | 功能描述:分立半導(dǎo)體模塊 IGBT (NPT3) 1200V 50A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類(lèi)型:Phase Controls 安裝風(fēng)格:Screw 封裝 / 箱體:DT61 封裝: |
| MKI50-12F7 | 功能描述:IGBT 模塊 50 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| MKI65-06A7T | 功能描述:分立半導(dǎo)體模塊 65 Amps 600V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類(lèi)型:Phase Controls 安裝風(fēng)格:Screw 封裝 / 箱體:DT61 封裝: |
| MKI75-06A7 | 功能描述:IGBT 模塊 75 Amps 600V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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