- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄45332 > MK60X256VLQ100 (FREESCALE SEMICONDUCTOR INC) FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP144 PDF資料下載
參數(shù)資料
| 型號： | MK60X256VLQ100 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP144 |
| 封裝： | 20 X 20 MM, LQFP-144 |
| 文件頁數(shù)： | 27/76頁 |
| 文件大?。?/td> | 1862K |
| 代理商： | MK60X256VLQ100 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁當前第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁
Table 19. Flash command timing specifications (continued)
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
teewr16bers Word-write to erased FlexRAM location
execution time
—
100
TBD
μs
teewr16b32k
teewr16b64k
teewr16b128k
teewr16b256k
Word-write to FlexRAM execution time:
32 KB EEPROM backup
64 KB EEPROM backup
128 KB EEPROM backup
256 KB EEPROM backup
—
TBD
1.5
TBD
2.5
ms
Longword-write to FlexRAM for EEPROM operation
teewr32bers Longword-write to erased FlexRAM location
execution time
—
200
TBD
μs
teewr32b32k
teewr32b64k
teewr32b128k
teewr32b256k
Longword-write to FlexRAM execution time:
32 KB EEPROM backup
64 KB EEPROM backup
128 KB EEPROM backup
256 KB EEPROM backup
—
TBD
2.7
TBD
3.7
ms
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash (FTFL) current and power specfications
Table 20. Flash (FTFL) current and power specfications
Symbol
Description
Typ.
Unit
IDD_PGM
Worst case programming current in program flash
10
mA
6.4.1.4 Reliability specifications
Table 21. NVM reliability specifications
Symbol
Description
Min.
Typ.1
Max.
Unit
Notes
Program Flash
tnvmretp10k Data retention after up to 10 K cycles
5
TBD
—
years
tnvmretp1k Data retention after up to 1 K cycles
10
TBD
—
years
tnvmretp100 Data retention after up to 100 cycles
15
TBD
—
years
nnvmcycp
Cycling endurance
10 K
TBD
—
cycles
Data Flash
tnvmretd10k Data retention after up to 10 K cycles
5
TBD
—
years
Table continues on the next page...
Peripheral operating requirements and behaviors
K60 Sub-Family Data Sheet Data Sheet, Rev. 4, 3/2011.
Freescale Semiconductor, Inc.
Preliminary
33
相關PDF資料 |
PDF描述 |
|---|---|
| MK60N512VMD100R | FLASH, 100 MHz, RISC MICROCONTROLLER, PBGA144 |
| MK60X256VLQ100R | FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP144 |
| MK60N512VMC100 | FLASH, 100 MHz, RISC MICROCONTROLLER, PBGA121 |
| MK60N256VMC100 | FLASH, 100 MHz, RISC MICROCONTROLLER, PBGA121 |
| MK68901P05 | MULTIFUNCTION PERIPHERAL, CDIP48 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MK60X256VMD100 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz |
| MK6116LN-15 | 制造商:STME 功能描述: 制造商:STMicroelectronics 功能描述: 制造商:STMicroelectronics 功能描述:2K X 8 STANDARD SRAM, 150 ns, PDIP24 |
| MK6116N-15 | 制造商:STMicroelectronics 功能描述: |
| MK-612S | 制造商:Silvertronic 功能描述:SET OF LEADS WITH CROC CL |
| MK6192F | 制造商:Ohmite Mfg Co 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。