參數(shù)資料
型號： MK60DN512ZVLQ10R
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 微控制器/微處理器
英文描述： 32-BIT, FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP144
封裝： 20 X 20 MM, LQFP-144
文件頁數(shù)： 30/78頁
文件大?。?/td> 1080K
代理商： MK60DN512ZVLQ10R
Table 21. Flash command timing specifications (continued)
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
teewr16b32k
teewr16b64k
teewr16b128k
teewr16b256k
Word-write to FlexRAM execution time:
32 KB EEPROM backup
64 KB EEPROM backup
128 KB EEPROM backup
256 KB EEPROM backup
—
TBD
1.5
TBD
2.5
ms
Longword-write to FlexRAM for EEPROM operation
teewr32bers Longword-write to erased FlexRAM location
execution time
—
200
TBD
μs
teewr32b32k
teewr32b64k
teewr32b128k
teewr32b256k
Longword-write to FlexRAM execution time:
32 KB EEPROM backup
64 KB EEPROM backup
128 KB EEPROM backup
256 KB EEPROM backup
—
TBD
2.7
TBD
3.7
ms
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash (FTFL) current and power specfications
Table 22. Flash (FTFL) current and power specfications
Symbol
Description
Typ.
Unit
IDD_PGM
Worst case programming current in program flash
10
mA
6.4.1.4 Reliability specifications
Table 23. NVM reliability specifications
Symbol
Description
Min.
Typ.1
Max.
Unit
Notes
Program Flash
tnvmretp10k Data retention after up to 10 K cycles
5
TBD
—
years
tnvmretp1k Data retention after up to 1 K cycles
10
TBD
—
years
tnvmretp100 Data retention after up to 100 cycles
15
TBD
—
years
nnvmcycp
Cycling endurance
10 K
TBD
—
cycles
Data Flash
tnvmretd10k Data retention after up to 10 K cycles
5
TBD
—
years
tnvmretd1k Data retention after up to 1 K cycles
10
TBD
—
years
tnvmretd100 Data retention after up to 100 cycles
15
TBD
—
years
Table continues on the next page...
Peripheral operating requirements and behaviors
K60 Sub-Family Data Sheet Data Sheet, Rev. 5, 5/2011.
36
Preliminary
Freescale Semiconductor, Inc.
相關(guān)PDF資料
PDF描述
MK60DX256ZVLQ10 32-BIT, FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP144
MK60DN512ZVLQ10 32-BIT, FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP144
MK60DX256ZVLL10R 32-BIT, FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP100
MK60DN256ZVLL10 32-BIT, FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP100
MK60DX256ZVLL10 32-BIT, FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP100
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MK60DN512ZVMC10 功能描述:ARM微控制器 - MCU KINETIS 512K USB LCD RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風格:SMD/SMT
MK60DN512ZVMD10 功能描述:ARM微控制器 - MCU KINETIS CORTEX M4 512K ENET RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風格:SMD/SMT
MK60DX256VLL10 功能描述:ARM微控制器 - MCU KINETIS 256K FLEX ENET RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風格:SMD/SMT
MK60DX256VLQ10 功能描述:ARM微控制器 - MCU KINETIS 256K FLEX ENET RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風格:SMD/SMT
MK60DX256VMC10 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:K60 Sub-Family
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