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| 型號： | MK40X512VMD100R |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | RISC MICROCONTROLLER, PBGA144 |
| 封裝： | 13 X 13 MM, MAPBGA-144 |
| 文件頁數(shù)： | 26/68頁 |
| 文件大?。?/td> | 1005K |
| 代理商： | MK40X512VMD100R |
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Table 20. NVM reliability characteristics (continued)
Symbol
Description
Min.
Typ.1
Max.
Unit
Notes
tnvmretee10 Data retention up to 10% of write endurance
10
TBD
—
years
tnvmretee1 Data retention up to 1% of write endurance
15
TBD
—
years
nnvmwree16 Write endurance with an EEPROM backup to
FlexRAM ratio of 16
35 K
TBD
—
writes
nnvmwree128 Write endurance with an EEPROM backup to
FlexRAM ratio of 128
315 K
TBD
—
writes
nnvmwree512 Write endurance with an EEPROM backup to
FlexRAM ratio of 512
1.27 M
TBD
—
writes
nnvmwree4k Write endurance with an EEPROM backup to
FlexRAM ratio of 4096
10 M
TBD
—
writes
nnvmwree32k Write endurance with an EEPROM backup to
FlexRAM ratio of 32,768
80 M
TBD
—
writes
1. Typical data retention values are based on intrinsic capability of the technology measured at high temperature derated to
25°C. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin
EB618.
2. Data retention is based on Tjavg = 55°C (temperature profile over the lifetime of the application).
3. Cycling endurance represents number of program/erase cycles at -40°C ≤ Tj ≤ 125°C
4. Write endurance represents the number of writes to FlexRAM at -40°C ≤Tj ≤ 125°C influenced by the cycling endurance of
the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum value assumes all
byte-writes to FlexRAM.
6.4.1.5 Write Endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the
FTFL to obtain an effective endurance increase for the EEPROM data. The built-in
EEPROM record management system raises the number of program/erase cycles that can
be attained prior to device wear-out by cycling the EEPROM data through a larger
EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size are used throughout
the entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_subsystem =
× Write_efficiency × n
EEPROM – 2 × EEESPLIT × EEESIZE
EEESPLIT × EEESIZE
nvmcycd
where
Writes_subsystem — minimum writes to FlexRAM for subsystem (each subsystem
can have different endurance)
Peripheral operating requirements and behaviors
K40 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010.
32
Preliminary
Freescale Semiconductor, Inc.
Preliminary
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