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參數(shù)資料
| 型號(hào)： | MK40DN512ZVMC10 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類(lèi)： | 微控制器/微處理器 |
| 英文描述： | 32-BIT, FLASH, 100 MHz, RISC MICROCONTROLLER, PBGA121 |
| 封裝： | 8 X 8 MM, MAPBGA-121 |
| 文件頁(yè)數(shù)： | 28/70頁(yè) |
| 文件大?。?/td> | 1011K |
| 代理商： | MK40DN512ZVMC10 |
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6.4.1.4 Reliability specifications
Table 23. NVM reliability specifications
Symbol
Description
Min.
Typ.1
Max.
Unit
Notes
Program Flash
tnvmretp10k Data retention after up to 10 K cycles
5
TBD
—
years
tnvmretp1k Data retention after up to 1 K cycles
10
TBD
—
years
tnvmretp100 Data retention after up to 100 cycles
15
TBD
—
years
nnvmcycp
Cycling endurance
10 K
TBD
—
cycles
Data Flash
tnvmretd10k Data retention after up to 10 K cycles
5
TBD
—
years
tnvmretd1k Data retention after up to 1 K cycles
10
TBD
—
years
tnvmretd100 Data retention after up to 100 cycles
15
TBD
—
years
nnvmcycd
Cycling endurance
10 K
TBD
—
cycles
FlexRAM as EEPROM
tnvmretee100 Data retention up to 100% of write endurance
5
TBD
—
years
tnvmretee10 Data retention up to 10% of write endurance
10
TBD
—
years
tnvmretee1 Data retention up to 1% of write endurance
15
TBD
—
years
nnvmwree16
nnvmwree128
nnvmwree512
nnvmwree4k
nnvmwree32k
Write endurance
EEPROM backup to FlexRAM ratio = 16
EEPROM backup to FlexRAM ratio = 128
EEPROM backup to FlexRAM ratio = 512
EEPROM backup to FlexRAM ratio = 4096
EEPROM backup to FlexRAM ratio =
32,768
35 K
315 K
1.27 M
10 M
80 M
TBD
—
writes
1. Typical data retention values are based on intrinsic capability of the technology measured at high temperature derated to
25°C. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin
EB618.
2. Data retention is based on Tjavg = 55°C (temperature profile over the lifetime of the application).
3. Cycling endurance represents number of program/erase cycles at -40°C ≤ Tj ≤ 125°C.
4. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum value
assumes all byte-writes to FlexRAM.
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
Peripheral operating requirements and behaviors
K40 Sub-Family Data Sheet Data Sheet, Rev. 5, 5/2011.
34
Preliminary
Freescale Semiconductor, Inc.
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相關(guān)代理商/技術(shù)參數(shù) |
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| MK40DN512ZVMD10 | 功能描述:ARM微控制器 - MCU KINETIS 512K USB LCD RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:72 MHz 程序存儲(chǔ)器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT |
| MK40DX128VLH7 | 功能描述:ARM微控制器 - MCU Kinetis 128K Flex RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:72 MHz 程序存儲(chǔ)器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT |
| MK40DX128VLK7 | 功能描述:ARM微控制器 - MCU Kinetis 128K Flex RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:72 MHz 程序存儲(chǔ)器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT |
| MK40DX128VLL7 | 功能描述:ARM微控制器 - MCU Kinetis 128K Flex RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:72 MHz 程序存儲(chǔ)器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT |
| MK40DX128VLQ10 | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:K40 Sub-Family |
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