參數(shù)資料
型號(hào): MJW21196
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Silicon Power Transistors(硅功率晶體管)
中文描述: 16 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-247AD
封裝: CASE 340L-02, TO-247, 3 PIN
文件頁(yè)數(shù): 2/7頁(yè)
文件大小: 75K
代理商: MJW21196
MJW21195 (PNP) MJW21196 (NPN)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (I
C
= 100 mAdc, I
B
= 0)
V
CEO(sus)
250
Vdc
Collector Cutoff Current (V
CE
= 200 Vdc, I
B
= 0)
I
CEO
100
Adc
Emitter Cutoff Current (V
CE
= 5 Vdc, I
C
= 0)
I
EBO
50
Adc
Collector Cutoff Current (V
CE
= 250 Vdc, V
BE(off)
= 1.5 Vdc)
I
CEX
50
Adc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 50 Vdc, t = 1 s (nonrepetitive)
(V
CE
= 80 Vdc, t = 1 s (nonrepetitive)
I
S/b
4.0
2.25
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 8 Adc, V
CE
= 5 Vdc)
(I
C
= 16 Adc, I
B
= 5 Adc)
h
FE
20
8
80
BaseEmitter On Voltage (I
C
= 8 Adc, V
CE
= 5 Vdc)
V
BE(on)
2.0
Vdc
CollectorEmitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
(I
C
= 16 Adc, I
B
= 3.2 Adc)
V
CE(sat)
1.0
3
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
V
RMS
= 28.3 V, f = 1 kHz, P
LOAD
= 100 W
RMS
h
FE
unmatched
h
matched
(Matched pair h
FE
= 50 @ 5 A/5 V)
T
HD
0.8
0.08
%
Current Gain Bandwidth Product
(I
C
= 1 Adc, V
CE
= 10 Vdc, f
test
= 1 MHz)
f
T
4
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1
MHz)
C
ob
500
pF
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