參數(shù)資料
型號(hào)： MJL1302
廠商： Motorola, Inc.
英文描述： 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS
中文描述： 15安培互補(bǔ)性的芯片功率晶體管200伏200瓦
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 203K
代理商： MJL1302
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
200
—
—
Vdc
Emitter–Base Voltage
(IE = 100
μ
Adc, IC = 0)
VEBO
7
—
—
Vdc
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
—
—
50
μ
Adc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
IEBO
—
—
5
μ
Adc
Emitter Cutoff Current
(VEB = 7 Vdc, IC = 0)
IEBO
—
—
25
μ
Adc
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 100 Vdc, t = 1 s (non–repetitive)
IS/b
4
1
—
—
—
—
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 7 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 15 Adc, VCE = 5 Vdc)
hFE
60
60
60
60
60
45
12
125
—
—
—
115
—
35
175
175
175
175
175
—
—
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1 Adc)
VCE(sat)
—
—
3
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
fT
—
30
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
(1) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2%.
Cob
—
—
600
pF
相關(guān)PDF資料
PDF描述
MJL1302 COMPLEMENTARY SILICON POWER TRANSISTORS
MJL1302A COMPLEMENTARY SILICON POWER TRANSISTORS
MJL1302A 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS
MJL3281 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS
MJL3281A 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJL1302A 功能描述:兩極晶體管 - BJT 15A 230V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJL1302AG 功能描述:兩極晶體管 - BJT 15A 230V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJL16218 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:POWER TRANSISTOR
MJL21193 功能描述:兩極晶體管 - BJT 16A 250V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJL21193_07 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
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