參數(shù)資料
型號: MJL0302A
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Complementary NPN(互補型NPN)
中文描述: 15 A, 260 V, PNP, Si, POWER TRANSISTOR, TO-264AA
封裝: CASE 340G-02, TO-264, TO-3PBL, 3 PIN
文件頁數(shù): 2/5頁
文件大?。?/td> 58K
代理商: MJL0302A
MJL0281A (NPN) MJL0302A (PNP)
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, JunctiontoCase
R
JC
0.69
°
C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(I
C
= 30 mA, I
B
= 0)
V
CEO(sus)
260
V
Collector Cutoff Current
(V
CB
= 260 V, I
E
= 0)
I
CBO
10
A
Emitter Cutoff Current
(V
EB
= 5.0 V, I
C
= 0)
I
EBO
5.0
A
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.5 A, V
CE
= 5.0 V)
(I
C
= 1.0 A, V
CE
= 5.0 V)
(I
C
= 3.0 A, V
CE
= 5.0 V)
h
FE
75
75
75
150
150
150
CollectorEmitter Saturation Voltage
(I
C
= 5.0 A, I
B
= 0.5 A)
V
CE(sat)
1.0
V
BaseEmitter On Voltage
(I
C
= 5.0 A, V
CE
= 5.0 V)
V
BE(on)
1.2
V
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product
(I
C
= 1.0 A, V
CE
= 5.0 V, f
test
= 1.0 MHz)
f
T
30
MHz
Output Capacitance
(V
CB
= 10 V, I
E
= 0, f
test
= 1.0
MHz)
C
ob
400
pF
200
0
T
C
, CASE TEMPERATURE (
°
C)
Figure 1. Power Derating
40
60
100
120
160
80
140
20
0
20
40
60
80
100
140
120
P
D
,
0.01
0.1
1
10
100
1
10
100
1000
1.0 ms
10 ms
5.0 ms
100 ms
DC
V
CE
, COLLECTOREMITTER VOLTAGE (V)
I
C
,
Figure 2. Safe Operating Area
160
180
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