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參數(shù)資料
| 型號： | MJH6284 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 20 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 封裝： | CASE 340D-02, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 209K |
| 代理商： | MJH6284 |
3
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.7
0.5
0.01
0.03
0.2
0.1
0.07
0.05
0.02
r
0.05
1.0
3.0
5.0
10
30
50
100
300
500
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 0.78
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.1
0.5
0.2
R
1000
0.3
0.03
0.01
0.02
2.0
20
200
0.3
0.2
0.1
0.05
0.02
0.01
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMITED
THERMAL LIMITATION
@ T
= 25
°
C
SINGLE PULSE
TJ = 150
°
C
0.5 ms
Figure 5. MJH6282, MJH6285
Figure 6. MJH6283, MJH6286
Figure 7. MJH6284, MJH6287
dc
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
2.0
50
2.0
I
0.1
5.0
10
10
0.5
50
0.2
5.0
20
1.0
20
100
0.05
TJ = 150
°
C
dc
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
2.0
50
2.0
I
0.1
5.0
10
10
0.5
50
0.2
5.0
20
1.0
20
100
0.05
TJ = 150
°
C
dc
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
2.0
50
2.0
I
0.1
5.0
10
10
0.5
50
0.2
5.0
20
1.0
20
100
0.05
1.0 ms
5.0 ms
0.1 ms
0.5 ms
1.0 ms
5.0 ms
0.1 ms
0.5 ms
1.0 ms
5.0 ms
0.1 ms
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMITED
THERMAL LIMITATION
@ T
= 25
°
C
SINGLE PULSE
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMITED
THERMAL LIMITATION
@ T
= 25
°
C
SINGLE PULSE
FBSOA, FORWARD BIAS SAFE OPERATING AREA
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0
50
60
I
10
20
80
40
40
10
DUTY CYCLE = 10%
30
20
30
110
100
0
Figure 8. Maximum RBSOA, Reverse Bias
Safe Operating Area
L = 200
μ
H
IC/IB
≥
100
TC = 25
°
C
VBE(off) = 0–5.0 V
RBE = 47
MJH6282, 6285
MJH6283, 6286
MJH6284, 6287
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5, 6 and 7 is based on TJ(pk) = 150 C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
150 C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJH6287 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJH6283 | DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80, 100 VOLTS 160 WATTS |
| MJH6284 | DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80, 100 VOLTS 160 WATTS |
| MJH6285 | Supplementary protector; Current Rating:25A; No. of Poles:2; Mounting Type:DIN Rail RoHS Compliant: Yes |
| MJH6286 | DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80, 100 VOLTS 160 WATTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJH6284_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS, 160 WATTS |
| MJH6284G | 功能描述:達(dá)林頓晶體管 20A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJH6284G (TO-218) | 制造商:ON Semiconductor 功能描述:TRANS NPN DARL 100V 20A TO247 |
| MJH6285 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80, 100 VOLTS 160 WATTS |
| MJH6286 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80, 100 VOLTS 160 WATTS |
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