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參數(shù)資料
| 型號(hào)： | MJH16006A |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTORS |
| 中文描述： | 8 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 封裝： | CASE 340D-02, 3 PIN |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大小： | 337K |
| 代理商： | MJH16006A |
5
Motorola Bipolar Power Transistor Device Data
+15
150
100
100
μ
F
MTP8P10
MPF930
MPF930
MUR105
MJE210
150
500
μ
F
Voff
50
+10
MTP12N10
MTP8P10
RB1
RB2
A
1
μ
F
1
μ
F
Drive Circuit
*Tektronix AM503
*
P6302 or Equivalent
Scope — Tektronix
7403 or Equivalent
T1
Lcoil(ICpk)
VCC
Note: Adjust Voff to obtain desired VBE(off) at Point A.
T1 adjusted to obtain IC(pk)
T1
+V
–V
0 V
A
*IB
*IC
L
T.U.T.
MR918
Vclamp
VCC
IC(pk)
VCE(pk)
VCE
IB
IC
IB1
IB2
VCEO(sus)
L = 10 mH
RB2 =
∞
VCC = 20 Volts
Inductive Switching
L = 750
μ
H
RB2 = 0
VCC = 20 Volts
RB1 selected for desired IB1
RBSOA
L = 750
μ
H
RB2 = 0
VCC = 20 Volts
RB1 selected for desired IB1
Table 1. Inductive Load Switching
I
Figure 12. Inductive Switching Measurements
Figure 13. Peak Reverse Base Current
VBE(off), REVERSE BASE VOLTAGE (VOLTS)
0
8
6
4
2
IB1 = 1 A
0.5 A
0
2
4
6
8
IC = 5 A
TJ = 25
°
C
tfi
trv
t, TIME
IC
90% IB1
IC(pk)
VCE(pk)
90% VCE(pk)
90% IC(pk)
10% VCE(pk)
10%
IC(pk)
2% IC
IB
tsv
tti
tc
VCE
td and tr
ts and tf
H.P. 214
OR
EQUIV.
P.G.
50
RB = 8.5
*IB
*IC
T.U.T.
RL
VCC
Vin
0 V
≈
11 V
tr
≤
15 ns
*
P6302 or Equivalent
VCC
250 V
RL
50
IC
5 A
IB
0.66 A
+15
150
100
100
μ
F
MTP8P10
MPF930
MPF930
MUR105
MJE210
150
500
μ
F
Voff
50
+10 V
MTP12N10
MTP8P10
RB1
RB2
A
1
μ
F
1
μ
F
T.U.T.
*IC
*IB
A
RL
VCC
V(off) adjusted
to give specified
off drive
RL
50
Table 2. Resistive Load Switching
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