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參數(shù)資料
| 型號(hào)： | MJH16006 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | POWER TRANSISTORS |
| 中文描述： | 功率晶體管 |
| 文件頁(yè)數(shù)： | 8/10頁(yè) |
| 文件大小： | 337K |
| 代理商： | MJH16006 |
8
Motorola Bipolar Power Transistor Device Data
SWITCHMODE DESIGN CONSIDERATIONS (Cont.)
5. RBSOA —
Reverse Biased Safe Operating Area has a first order de-
pendency on circuit configuration and drive parameters. The
RBSOA curves in this data sheet are valid only for the condi-
tions specified. For a comparison of RBSOA results in sever-
al types of circuits (see Application Note AN951).
6. DESIGN SAMPLES —
Transistor parameters tend to vary much more from wafer
lot to wafer lot, over long periods of time, than from one de-
vice to the next in the same wafer lot. For design evaluation
it is advisable to use transistors from several different date
codes.
7. BAKER CLAMPS —
Many unanticipated pitfalls can be avoided by using Baker
Clamps. MUR105 and MUR1100 diodes are recommended
for base drives less than 1 amp. Similarly, MUR405 and
MUR4100 types are well–suited for higher drive require-
ments (see Article Reprint AR131).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJH16006A | POWER TRANSISTORS |
| MJH16006 | POWER TRANSISTORS 8 AMPERES 500 VOLTS 150 WATTS |
| MJH6282 | DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80, 100 VOLTS 160 WATTS |
| MJH6284 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJH6287 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJH16006A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MJH16008 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| MJH16010A | 制造商:Motorola 功能描述:16010 |
| MJH16012 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MJH16018 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
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