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參數(shù)資料
| 型號(hào)： | MJH11022 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS |
| 中文描述： | 15 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 212K |
| 代理商： | MJH11022 |
2
Motorola Bipolar Power Transistor Device Data
MJH11017, MJH11018
(VCE = 75 Vdc, IB = 0)
200
—
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
MJH11017, MJH11018
—
1.0
Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0)
IEBO
—
—
5.0
2.0
mAdc
Collector–Emitter Saturation Voltage
(IC = 15 Adc, IB = 150 mA)
Base–Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc)
Base–Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)
DYNAMIC CHARACTERISTICS
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Small–Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
—
4.0
VBE(on)
VBE(sat)
—
—
2.8
3.8
Vdc
Vdc
—
600
MJH11017, MJH11019, MJH11021
hfe
75
—
—
Figure 2. Switching Times Test Circuit
RB & RC varied to obtain desired current levels
D1, must be fast recovery types, e.g.:
1N5825 used above IB
≈
100 mA
MSD6100 used below IB
≈
100 mA
tr, tf
≤
10 ns
Duty Cycle = 1.0%
For td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit, reverse diode and voltage polarities.
V2
APPROX
+12 V
0
V1
APPROX
–8.0 V
VCC
100 V
TUT
SCOPE
RB
+4.0 V
D1
51
RC
25
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJH11022G | 功能描述:達(dá)林頓晶體管 15A 250V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJH11022G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR |
| MJH12004 | 制造商:Freescale Semiconductor 功能描述:SUB ONLY MOTOROLA SEMICONDUCTO |
| MJH13090 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MJH13091 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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