參數(shù)資料
型號: MJH10012
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: 10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-218
文件頁數(shù): 1/6頁
文件大?。?/td> 191K
代理商: MJH10012
1
Motorola Bipolar Power Transistor Device Data
NPN Silicon Power Darlington
Transistor
The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors
designed for automotive ignition, switching regulator and motor control applications.
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 400 Vdc (Min)
175 Watts Capability at 50 Volts
Automotive Functional Tests
MAXIMUM RATINGS
Rating
Symbol
MJ10012
MJH10012
Unit
Collector–Emitter Voltage
VCEO
400
Vdc
Collector–Emitter Voltage
(RBE = 27 )
VCER
550
Vdc
Collector–Base Voltage
VCBO
600
Vdc
Emitter–Base Voltage
VEBO
8.0
Vdc
Collector Current — Continuous
— Peak (1)
IC
10
15
Adc
Base Current
IB
2.0
Adc
Total Power Dissipation
@ TC = 25_C
@ TC = 100_C
Derate above 25
_C
PD
175
100
1.0
118
47.5
1.05
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 200
– 55 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.0
0.95
_C/W
Maximum Lead Temperature for
Soldering Purposes: 1/8
″ from
Case for 5 Seconds
TL
275
275
_C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
v 10%.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ10012/D
Motorola, Inc. 1995
MJ10012
MJH10012
10 AMPERE
POWER TRANSISTORS
DARLINGTON NPN
SILICON
400 VOLTS
175 AND 118 WATTS
CASE 1–07
TO–204AA
(TO–3)
MJ10012
CASE 340D–01
TO–218 TYPE
MJH10012
≈ 1 k
≈ 30
EMITTER
BASE
COLLECTOR
REV 2
相關(guān)PDF資料
PDF描述
MJH16002 5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-218
MJH16004 5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-218
MJH16008 8 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-218
MJH16106 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-218
MJH12005 8 A, 750 V, NPN, Si, POWER TRANSISTOR, TO-218
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