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參數(shù)資料
| 型號(hào)： | MJF6107 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7 A, 70 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ISOLATED TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 102K |
| 代理商： | MJF6107 |
Power Transistor
For Isolated Package Applications
Designed for general–purpose amplifier and switching applications,
where the mounting surface of the device is required to be electrically
isolated from the heatsink or chassis.
Electrically Similar to the Popular 2N6107
70 V
CEO(sus)
7 A Rated Collector Current
No Isolating Washers Required
Reduced System Cost
High Current Gain–Bandwidth Product
fT = 4 MHz (Min) Ca, IC
= 500 mAdc
UL Recognized, File #E69369, to 3500 V
RMS Isolation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
70
Vdc
Collector–Base Voltage
VCB
80
Vdc
Emitter–Base Voltage
VEB
5
Vdc
RMS Isolation Voltage (1)
Test No. 1 Per Fig. 13
(for 1 sec, R.H. < 30%,
Test No. 2 Per Fig. 14
TA = 25_C)
Test No. 3 Per Fig. 15
VISOL
4500
3500
1500
VRMS
Collector Current — Continuous
Peak
IC
7
10
Adc
Base Current
IB
3
Adc
Total Power Dissipation* @ TC = 25_C
Derate above 25
_C
PD
34
0.27
Watts
W/
_C
Total Power Dissipation @ TA = 25_C
Derate above 25
_C
PD
2
0.016
Watts
W/
_C
Operating and Storage Junction Temperature Range
TJ, Tstg
–65 to +150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RθJA
62.5
_C/W
Thermal Resistance, Junction to Case*
RθJC
3.7
_C/W
Lead Temperature for Soldering Purpose
TL
260
_C
*Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted
on a heatsink with thermal grease and a mounting torque of
≥ 6 in. lbs.
(1) Proper strike and creepage distance must be provided.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 3
1
Publication Order Number:
MJF6107/D
MJF6107
PNP SILICON
POWER TRANSISTOR
7 AMPERES
70 VOLTS
34 WATTS
CASE 221D–02
TO–220 TYPE
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