參數(shù)資料
型號(hào)： MJE8503AAF
廠(chǎng)商： ON SEMICONDUCTOR
元件分類(lèi)： 功率晶體管
英文描述： 5 A, 700 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù)： 12/60頁(yè)
文件大?。?/td> 342K
代理商： MJE8503AAF
MJE8503A
3–651
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
700
—
Vdc
Collector Cutoff Current
(VCE = 1500 Vdc, VBE = 0, TC = 25°C)
(VCE = 1500 Vdc, VBE = 0, TC = 125°C)
ICES
—
0.1
2.0
mAdc
Collector Cutoff Current
(VCE = 1500 Vdc, RBE = 50 Ohms, TC = 100°C)
ICER
—
5.0
mAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
—
1.0
mAdc
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
IS/b
See Figure 2
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 4.5 Adc, VCE = 5.0 Vdc)
hFE
7.5
2.25
—
Base-Emitter Saturation Voltage
(IC = 2.5 Adc, IB = 1.0 Vdc)
(IC = 4.5 Adc, IB = 2.0 Vdc)
VBE(sat)
—
1.5
Vdc
Collector-Emitter Saturation Voltage
(IC = 2.5 Adc, IB = 1.0 Vdc)
(IC = 4.5 Adc, IB = 2.0 Vdc)
VCE(sat)
—
2.0
3.0
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(IC = 0.1 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
fT
—
7.0
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 0.1 MHz)
Cob
—
125
—
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
td
—
0.06
0.2
s
Rise Time
(IC = 2.5 Adc, IB = 1.0 Adc, VCC = 500 Vdc
tr
—
0.08
2.0
Storage Time
( CB
CC
VBE(off) = 5.0 Vdc, tp = 50 s)
ts
—
1.2
4.0
Fall Time
tf
—
0.7
2.0
Inductive Load (Table 1)
Storage Time
(I
2 5 Ad
I
1 0 Ad
V
500 Vd
tsv
—
1.2
—
s
Crossover Time
(IC = 2.5 Adc, IB = 1.0 Adc, Vclamp = 500 Vdc
VBE(off) = 5.0 Vdc, tp = 50 s)
tc
—
0.45
—
Fall Time
VBE(off) 5.0 Vdc, t
50
s)
tfi
—
0.18
—
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2%
相關(guān)PDF資料
PDF描述
MJE8503AAS 5 A, 700 V, NPN, Si, POWER TRANSISTOR
MJE8503ABA 5 A, 700 V, NPN, Si, POWER TRANSISTOR
MJE8503A 5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE8503ABU 5 A, 700 V, NPN, Si, POWER TRANSISTOR
MJE8503ABV 5 A, 700 V, NPN, Si, POWER TRANSISTOR
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