參數資料
型號: MJE703
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
中文描述: 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-225AA
文件頁數: 4/6頁
文件大?。?/td> 256K
代理商: MJE703
4
Motorola Bipolar Power Transistor Device Data
V
V
IC, COLLECTOR CURRENT (AMP)
PNP
MJE700, T Series
NPN
MJE800, T Series
Figure 10. DC Current Gain
Figure 11. Collector Saturation Region
Figure 12. “On” Voltages
0.04
IC, COLLECTOR CURRENT (AMP)
300
0.06
0.2
2.0 k
800
4.0 k
h
VCE = 3.0 V
TJ = 125
°
C
3.0 k
0.1
0.6
25
°
C
–55
°
C
1.0 k
0.4
1.0
6.0 k
400
600
2.0
4.0
0.04
300
0.06
0.2
2.0 k
800
4.0 k
h600
0.1
0.6
1.0 k
0.4
1.0
6.0 k
400
2.0
4.0
3.4
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.6
0.1
0.2
0.5
10
2.0
5.0
IC =
0.5 A
1.0 A
1.0
TJ = 25
°
C
3.0
1.0
0.04
IC, COLLECTOR CURRENT (AMP)
1.4
1.0
V
2.2
1.8
0.6
0.2
0.06
0.2
2.0
0.1
0.6
0.4
1.0
4.0
0.04
IC, COLLECTOR CURRENT (AMP)
1.4
1.0
V
2.2
1.8
0.6
0.2
0.06
0.2
2.0
0.1
0.6
0.4
1.0
4.0
20
50
100
3.4
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.6
0.1
0.2
0.5
10
2.0
5.0
1.0
3.0
1.0
20
50
100
VBE(sat) @ IC/IB = 250
VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 250
2.0 A
4.0 A
TJ = 25
°
C
VCE = 3.0 V
TJ = 125
°
C
25
°
C
–55
°
C
IC =
0.5 A
1.0 A
TJ = 25
°
C
2.0 A
4.0 A
VBE(sat) @ IC/IB = 250
VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 250
TJ = 25
°
C
相關PDF資料
PDF描述
MJE800 Monolithic Construction With Built-in Base- Emitter Resistors
MJE802 Monolithic Construction With Built-in Base- Emitter Resistors
MJE702 Monolithic Construction With Built-in Base- Emitter Resistors
MJE703 Monolithic Construction With Built-in Base- Emitter Resistors
MJH11017 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS
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參數描述
MJE703G 功能描述:達林頓晶體管 4A 80V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJE703STU 功能描述:達林頓晶體管 PNP Si Transistor Epitaxial Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJE703T 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(4.0A,60-80V,40W)
MJE710 制造商: 功能描述: 制造商:undefined 功能描述:
MJE710_08 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS