參數(shù)資料
型號(hào)： MJE521
廠商： STMICROELECTRONICS
元件分類： 功率晶體管
英文描述： 4 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-126
文件頁數(shù)： 1/4頁
文件大?。?/td> 44K
代理商： MJE521
MJE521
SILICON NPN TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPE
DESCRIPTION
The MJE521 is a silicon Epitaxial-Base NPN
transistor in Jedec SOT-32 plastic package.
It is intended for use in 5 to 20W audio amplifiers,
general purpose amplifier and switching circuits.
INTERNAL SCHEMATIC DIAGRAM
September 2003
3
2
1
SOT-32
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage (IE = 0)
40
V
VCEO
Collector-Emitter Voltage (IB = 0)
40
V
VEBO
Emitter-Base Voltage (IC = 0)
4
V
IC
Collector Current
4
A
ICM
Collector Peak Current (tp < 5 ms)
8
A
IB
Base Current
2
A
Ptot
Total Dissipation at Tc
≤ 25 oC
40
W
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
1/4
相關(guān)PDF資料
PDF描述
MJE6043 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-127
MJE700 4 A, 60 V, PNP, Si, POWER TRANSISTOR
MJE701 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
MJE800 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
MJE801 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE521 制造商:STMicroelectronics 功能描述:Bipolar Transistor
MJE521_03 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SILICON NPN TRANSISTOR
MJE521G 功能描述:兩極晶體管 - BJT 4A 40V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE52T 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor
MJE53T 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor
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